发明授权
US07388263B2 Shallow trench isolation dummy pattern and layout method using the same
有权
浅沟隔离虚拟图案和布局方法使用相同
- 专利标题： Shallow trench isolation dummy pattern and layout method using the same
- 专利标题（中）： 浅沟隔离虚拟图案和布局方法使用相同
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申请号： US10993937申请日： 2004-11-19
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公开(公告)号： US07388263B2公开(公告)日： 2008-06-17
- 发明人: Kelvin Yih-Yuh Doong , Chin-Chiu Hsia
- 申请人： Kelvin Yih-Yuh Doong , Chin-Chiu Hsia
- 申请人地址： TW Hsin-chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-chu
- 代理机构： Thomas, Kayden, Horstemeyer & Risley
- 优先权： TW92132806A 20031121
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A dummy cell pattern for shallow trench isolation (STI). Active and shallow trench isolation areas are bounded by a circumference. An active area pattern completely overlaps the active area and a first polysilicon pattern in the shallow trench isolation area is outside the active area pattern. Layout methods using the same are also disclosed.
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