Invention Grant
US07396767B2 Semiconductor structure including silicide regions and method of making same
有权
包括硅化物区域的半导体结构及其制造方法
- Patent Title: Semiconductor structure including silicide regions and method of making same
- Patent Title (中): 包括硅化物区域的半导体结构及其制造方法
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Application No.: US10892915Application Date: 2004-07-16
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Publication No.: US07396767B2Publication Date: 2008-07-08
- Inventor: Chii-Ming Wu , Cheng-Tung Lin , Mei-Yun Wang , Chih-Wei Chang , Shau-Lin Shue
- Applicant: Chii-Ming Wu , Cheng-Tung Lin , Mei-Yun Wang , Chih-Wei Chang , Shau-Lin Shue
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Joseph A. Powers
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method of forming a silicided gate on a substrate having active regions, comprising the steps of: forming a first silicide in the active regions from a first material; and forming a second silicide in the gate from a second material, wherein the first silicide forms a barrier against the second material forming a silicide in the active regions during the second silicide forming step, wherein said second silicide is thicker than said first silicide.
Public/Granted literature
- US20060011996A1 Semiconductor structure including silicide regions and method of making same Public/Granted day:2006-01-19
Information query
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