Invention Grant
- Patent Title: Bonding and probing pad structures
- Patent Title (中): 粘结和探测垫结构
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Application No.: US11539498Application Date: 2006-10-06
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Publication No.: US07397127B2Publication Date: 2008-07-08
- Inventor: Liang-Chen Lin , Pei-Haw Tsao
- Applicant: Liang-Chen Lin , Pei-Haw Tsao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A pad structure includes a first metal-containing layer formed over a substrate. A first passivation layer is formed over the first metal-containing layer. The first passivation layer has a first opening partially exposing the first metal-containing layer. A pad layer is formed over the first passivation layer, covering the first opening. The pad layer includes a probing region configured to be contacted by a probe and a bonding region configured to have a wired bonded to it. The probing region contacts the first metal-containing layer through the first opening, and the bonding region overlies a portion of the first passivation layer.
Public/Granted literature
- US20080083992A1 NOVEL BONDING AND PROBING PAD STRUCTURES Public/Granted day:2008-04-10
Information query
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