发明授权
US07406020B2 Method of writing data on a storage device using a probe technique
有权
使用探针技术在存储设备上写入数据的方法
- 专利标题: Method of writing data on a storage device using a probe technique
- 专利标题(中): 使用探针技术在存储设备上写入数据的方法
-
申请号: US10934561申请日: 2004-09-07
-
公开(公告)号: US07406020B2公开(公告)日: 2008-07-29
- 发明人: Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
- 申请人: Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2003-0062376 20030906
- 主分类号: G11B7/00
- IPC分类号: G11B7/00
摘要:
A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.