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    Resistive memory device having array of probes and method of manufacturing the resistive memory device
    3.
    发明授权
    Resistive memory device having array of probes and method of manufacturing the resistive memory device 失效
    具有探针阵列的电阻式存储器件和制造该阻性存储器件的方法

    公开(公告)号：US07687838B2

    公开(公告)日：2010-03-30

    申请号：US11240570

    申请日：2005-10-03

    申请人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

    发明人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

    IPC分类号： H01L21/66 ,  H01L21/00 ,  G11B9/00 ,  G11B3/00 ,  G11B11/00

    CPC分类号： H01L27/101 ,  B82Y10/00 ,  G11B9/02 ,  G11C11/22

    摘要： Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

    摘要翻译： 提供了具有探针阵列的电阻式存储器件及其制造方法。 电阻式存储器件包括一个存储器部分，其具有顺序地形成在第一衬底上的底部电极和铁电层; 探针部分，其具有布置在第二基板上的电阻式探针阵列，其中所述电阻式探针的尖端面对强电介质层，以便在铁电层上写入和读取数据; 以及在铁电层上或上方抓住并固定电阻式探头的结合层。 制造电阻式存储器件的方法包括在第一衬底上依次形成底电极和铁电层; 在第二衬底上形成电阻性探针阵列; 并且使用结合层将第一衬底与第二衬底结合到晶片级，使得电阻探针的尖端面对强电介质层。

    Resistive memory device having array of probes and method of manufacturing the resistive memory device
    4.
    发明申请
    Resistive memory device having array of probes and method of manufacturing the resistive memory device 失效
    具有探针阵列的电阻式存储器件和制造该阻性存储器件的方法

    公开(公告)号：US20060091437A1

    公开(公告)日：2006-05-04

    申请号：US11240570

    申请日：2005-10-03

    申请人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

    发明人： Seung-bum Hong ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Dong-ki Min ,  Eun-sik Kim ,  Chul-min Park ,  Sung-dong Kim ,  Kyoung-lock Baeck

    IPC分类号： H01L29/94

    CPC分类号： H01L27/101 ,  B82Y10/00 ,  G11B9/02 ,  G11C11/22

    摘要： Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

    摘要翻译： 提供了具有探针阵列的电阻式存储器件及其制造方法。 电阻式存储器件包括一个存储器部分，其具有顺序地形成在第一衬底上的底部电极和铁电层; 探针部分，其具有布置在第二基板上的电阻式探针阵列，其中所述电阻式探针的尖端面对强电介质层，以便在铁电层上写入和读取数据; 以及在铁电层上或上方抓住并固定电阻式探头的结合层。 制造电阻式存储器件的方法包括在第一衬底上依次形成底电极和铁电层; 在第二衬底上形成电阻性探针阵列; 并且使用结合层将第一衬底与第二衬底结合到晶片级，使得电阻探针的尖端面对强电介质层。

    Two-axis actuator with large stage
    5.
    发明授权
    Two-axis actuator with large stage 失效
    双轴执行器大台阶

    公开(公告)号：US07142077B2

    公开(公告)日：2006-11-28

    申请号：US10922140

    申请日：2004-08-20

    申请人： Kyoung-lock Baeck ,  Jong-up Jun ,  Ju-hwan Jung ,  Seung-bum Hong ,  Dong-ki Min ,  Hong-sik Park

    发明人： Kyoung-lock Baeck ,  Jong-up Jun ,  Ju-hwan Jung ,  Seung-bum Hong ,  Dong-ki Min ,  Hong-sik Park

    IPC分类号： H01H51/22

    CPC分类号： H02N1/008 ,  H02K2201/18

    摘要： A two-axis actuator having a large stage area and including includes a substrate, an anchor unit having sides approximately in a rectangular shape, fixed on the substrate, a plurality of first actuating parts actuating in a first direction and separated from the substrate within regions of both sides of the anchor unit, a plurality of second actuating parts actuating in a second direction between the first actuating parts, a rectangular shaped stage that actuates in the second direction, disposed above the second actuating parts, a third actuating part formed on the first actuating part, and elevated at a predetermined distance from the stage and the anchor unit, first direction deformable springs that support the first actuating part in inner parts of the anchor unit, and second direction deformable springs formed to fix the second actuating part in an inner part of the third actuating part.

    摘要翻译： 具有大台阶区域的双轴致动器包括：基板，具有固定在基板上的大致矩形形状的侧面的锚定单元，多个第一致动部件，其在第一方向上致动并且在区域内与基板分离 所述锚定单元的两侧的多个第二致动部件在所述第一致动部件之间沿第二方向致动，所述第二致动部件设置在所述第二致动部件上方的在所述第二方向上致动的矩形台架， 第一致动部件，并且与所述平台和所述锚固单元一起预定距离地升高，所述第一方向可变形弹簧，其支撑所述锚固单元的内部部分中的所述第一致动部件;以及第二方向可变形弹簧，其形成为将所述第二致动部件固定在 第三驱动部件的内部部分。

    Two-axis actuator with large stage
    6.
    发明申请
    Two-axis actuator with large stage 失效
    双轴执行器大台阶

    公开(公告)号：US20050040919A1

    公开(公告)日：2005-02-24

    申请号：US10922140

    申请日：2004-08-20

    申请人： Kyoung-lock Baeck ,  Jong-up Jun ,  Ju-hwan Jung ,  Seung-bum Hong ,  Dong-ki Min ,  Hong-sik Park

    发明人： Kyoung-lock Baeck ,  Jong-up Jun ,  Ju-hwan Jung ,  Seung-bum Hong ,  Dong-ki Min ,  Hong-sik Park

    IPC分类号： G01Q10/00 ,  G01Q10/04 ,  G01Q80/00 ,  H02N1/00 ,  H02N1/06 ,  H01H51/22

    CPC分类号： H02N1/008 ,  H02K2201/18

    摘要： A two-axis actuator having a large stage area and including includes a substrate, an anchor unit having sides approximately in a rectangular shape, fixed on the substrate, a plurality of first actuating parts actuating in a first direction and separated from the substrate within regions of both sides of the anchor unit, a plurality of second actuating parts actuating in a second direction between the first actuating parts, a rectangular shaped stage that actuates in the second direction, disposed above the second actuating parts, a third actuating part formed on the first actuating part, and elevated at a predetermined distance from the stage and the anchor unit, first direction deformable springs that support the first actuating part in inner parts of the anchor unit, and second direction deformable springs formed to fix the second actuating part in an inner part of the third actuating part.

    摘要翻译： 具有大台阶区域的双轴致动器包括：基板，具有固定在基板上的大致矩形形状的侧面的锚定单元，多个第一致动部件，其在第一方向上致动并且在区域内与基板分离 所述锚定单元的两侧的多个第二致动部件在所述第一致动部件之间沿第二方向致动，所述第二致动部件设置在所述第二致动部件上方的在所述第二方向上致动的矩形台架， 第一致动部件，并且与所述平台和所述锚固单元一起预定距离地升高，所述第一方向可变形弹簧，其支撑所述锚固单元的内部部分中的所述第一致动部件;以及第二方向可变形弹簧，其形成为将所述第二致动部件固定在 第三驱动部件的内部部分。

    Semiconductor probe with resistive tip and method of fabricating the same
    7.
    发明申请
    Semiconductor probe with resistive tip and method of fabricating the same 失效
    具有电阻尖端的半导体探针及其制造方法

    公开(公告)号：US20060060779A1

    公开(公告)日：2006-03-23

    申请号：US11219732

    申请日：2005-09-07

    申请人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： G21K7/00

    CPC分类号： G11B9/1409 ,  G01Q60/30 ,  Y10S977/875 ,  Y10S977/878 ,  Y10S977/879

    摘要： A semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist layer orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist layer on the substrate to cover a portion of the first photoresist layer and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresist layers; and removing the first and second photoresist layers, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.

    摘要翻译： 具有电阻尖端的半导体探针及其制造方法。 该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂层，并且蚀刻所述掩模层使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂层以覆盖所述第一光致抗蚀剂层的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂层覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂层，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

    Semiconductor probe with resistive tip and method of fabricating the same
    9.
    发明授权
    Semiconductor probe with resistive tip and method of fabricating the same 失效
    具有电阻尖端的半导体探针及其制造方法

    公开(公告)号：US07319224B2

    公开(公告)日：2008-01-15

    申请号：US11219732

    申请日：2005-09-07

    申请人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： G21K7/00

    CPC分类号： G11B9/1409 ,  G01Q60/30 ,  Y10S977/875 ,  Y10S977/878 ,  Y10S977/879

    摘要： Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist on the substrate to cover a portion of the first photoresist and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresists; and removing the first and second photoresists, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.

    摘要翻译： 提供具有电阻尖端的半导体探针和制造半导体探针的方法。 该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂，并且蚀刻所述掩模层，使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂以覆盖所述第一光致抗蚀剂的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

    Magnetic logic device and methods of manufacturing and operating the same
    10.
    发明授权
    Magnetic logic device and methods of manufacturing and operating the same 有权
    磁逻辑器件及其制造和操作方法

    公开(公告)号：US07529119B2

    公开(公告)日：2009-05-05

    申请号：US11320898

    申请日：2005-12-30

    申请人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

    发明人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

    IPC分类号： G11C11/00

    CPC分类号： H03K19/16 ,  H01L43/08

    摘要： A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

    摘要翻译： 提供了一种磁逻辑器件（MLD）以及制造和操作MLD的方法。 MLD包括：第一个互连; 形成在所述第一互连上的下磁性层，所述下磁性层具有沿预定方向固定的磁化方向; 形成在下磁性层上的非磁性层; 形成在所述非磁性层上的上磁性层，所述上磁性层具有与所述下磁性层的磁化方向平行或反平行的磁化方向; 以及形成在上磁性层上的第二互连。 第一电流源设置在第一互连的一端和第二互连的一端之间，第二电流源设置在第一互连的另一端和第二互连的另一端之间。