发明授权
- 专利标题： Capture of residual refractory metal within semiconductor device
- 专利标题（中）： 在半导体器件内捕获残余难熔金属
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申请号： US11650978申请日： 2007-01-09
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公开(公告)号： US07408239B2公开(公告)日： 2008-08-05
- 发明人: Takeshi Kamino , Toshiaki Tsutsumi , Shuji Kodama , Takio Ohno
- 申请人： Takeshi Kamino , Toshiaki Tsutsumi , Shuji Kodama , Takio Ohno
- 申请人地址： JP Chiyoda-Ku, Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Chiyoda-Ku, Tokyo
- 代理机构： Buchanan Ingersoll & Rooney PC
- 优先权： JP2001-101470 20010330
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
There is provided a semiconductor device with a configuration in which a dummy silicide area 11 is provided in the vicinity of a non-silicide area 2 to easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.
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