发明授权
US07410852B2 Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
有权
用于形成金属栅极和全硅化栅场效应晶体管的光热退火方法
- 专利标题： Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
- 专利标题（中）： 用于形成金属栅极和全硅化栅场效应晶体管的光热退火方法
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申请号： US11408522申请日： 2006-04-21
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公开(公告)号： US07410852B2公开(公告)日： 2008-08-12
- 发明人: Scott D. Allen , Cyril Cabral, Jr. , Kevin K. Dezfulian , Sunfei Fang , Brian J. Greene , Rajarao Jammy , Christian Lavoie , Zhijiong Luo , Hung Ng , Chun-Yung Sung , Clement H. Wann , Huilong Zhu
- 申请人： Scott D. Allen , Cyril Cabral, Jr. , Kevin K. Dezfulian , Sunfei Fang , Brian J. Greene , Rajarao Jammy , Christian Lavoie , Zhijiong Luo , Hung Ng , Chun-Yung Sung , Clement H. Wann , Huilong Zhu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser. P.C.
- 代理商 Robert M. Trepp, Esq.
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/42
摘要：
An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a source/drain region adjacent the metal gate. Another opto-thermal annealing method may be used for simultaneously opto-thermally annealing: (1) a silicon layer and a silicide forming metal layer to form a fully silicided gate; and (2) a source/drain region to form an annealed source/drain region. An additional opto-thermal annealing method may use a thermal insulator layer in conjunction with a thermal absorber layer to selectively opto-thermally anneal a silicon layer and a silicide forming metal layer to form a fully silicide gate.
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