发明授权
- 专利标题： Dopant barrier for doped glass in memory devices
- 专利标题（中）： 存储器件中掺杂玻璃的掺杂阻挡层
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申请号： US11003138申请日： 2004-12-03
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公开(公告)号： US07411255B2公开(公告)日： 2008-08-12
- 发明人: Kunal R. Parekh , Gurtej Singh Sandhu
- 申请人： Kunal R. Parekh , Gurtej Singh Sandhu
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman, Lundberg & Woessner, P.A.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor device has a diffusion barrier formed between a doped glass layer and surface structures formed on a substrate. The diffusion barrier includes alumina and optionally a nitride, and has a layer thickness satisfying the high aspect ratio of the gaps between the surface structures, while adequately preventing dopants in doped glass layer from diffusing out of the doped glass layer to the surface structures and the substrate. Further, heavy water can be used during the formation of the alumina so that deuterium may be accomplished near the interface of surface structures and the substrate to enhance the performance of the device.
公开/授权文献
- US20050151179A1 Dopant barrier for doped glass in memory devices 公开/授权日：2005-07-14
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