发明授权
US07413951B2 Stacked capacitor and method for producing stacked capacitors for dynamic memory cells
失效
叠层电容器和用于制造用于动态存储单元的叠层电容器的方法
- 专利标题: Stacked capacitor and method for producing stacked capacitors for dynamic memory cells
- 专利标题(中): 叠层电容器和用于制造用于动态存储单元的叠层电容器的方法
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申请号: US11518504申请日: 2006-09-07
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公开(公告)号: US07413951B2公开(公告)日: 2008-08-19
- 发明人: Stephan Kudelka , Peter Moll , Stefan Jakschik , Odo Wunnicke
- 申请人: Stephan Kudelka , Peter Moll , Stefan Jakschik , Odo Wunnicke
- 申请人地址: DE Munich
- 专利权人: Qimonda AG
- 当前专利权人: Qimonda AG
- 当前专利权人地址: DE Munich
- 代理机构: Slater & Matsil, L.L.P.
- 优先权: DE102005042524 20050907
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
A method produces stacked capacitors for dynamic memory cells, in which a number of trenches (48) are formed in the masking layer (40), each trench (48) being arranged above a respective contact plug (26) and extending from the top (42) of the masking layer (40) to the contact plugs (26). A conductive layer (50) covers the side walls (49) of the trenches (48) and the contact plugs (26) in order to form a first electrode (60) of a stacked capacitor (12). In an upper region (63), which is remote from the contact stack (26), the conductive layer (50) is replaced by an insulating layer, so that it is not possible for a short circuit to arise in the event of any adhesion between adjacent electrodes.