发明授权
- 专利标题: Transistor and method of operating transistor
- 专利标题(中): 晶体管及晶体管工作方式
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申请号: US11274475申请日: 2005-11-16
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公开(公告)号: US07414295B2公开(公告)日: 2008-08-19
- 发明人: Choong-Rae Cho , In-Kyeong Yoo , Myoung-Jae Lee
- 申请人: Choong-Rae Cho , In-Kyeong Yoo , Myoung-Jae Lee
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2004-0093639 20041116
- 主分类号: H01L29/8605
- IPC分类号: H01L29/8605 ; G11C11/00
摘要:
A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line.