发明授权
- 专利标题： Anneal of epitaxial layer in a semiconductor device
- 专利标题（中）： 在半导体器件中退火外延层
-
申请号： US11620987申请日： 2007-01-08
-
公开(公告)号： US07416605B2公开(公告)日： 2008-08-26
- 发明人: Stefan Zollner , Veeraraghavan Dhandapani , Paul A. Grudowski , Gregory S. Spencer
- 申请人： Stefan Zollner , Veeraraghavan Dhandapani , Paul A. Grudowski , Gregory S. Spencer
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 David G. Dolezal; Robert L. King
- 主分类号： C30B25/14
- IPC分类号： C30B25/14 ; C30B25/12
摘要：
An anneal of an epitaxially grown crystalline semiconductor layer comprising a combination of group-IV elements. The layer contains at least one of the group of carbon and tin. The layer of epitaxially grown material is annealed at a temperature substantially in a range of 1,000 to 1,400 degrees Celsius for a period not to exceed 100 milliseconds within 10% of the peak temperature. The anneal is performed for example with a laser anneal or a flash lamp anneal. The limited-time anneal may improve carrier mobility of a transistor.
公开/授权文献
- US20080163813A1 ANNEAL OF EPITAXIAL LAYER IN A SEMICONDUCTOR DEVICE 公开/授权日：2008-07-10