Invention Grant
- Patent Title: Temperature control for single substrate semiconductor processing reactor
- Patent Title (中): 单基板半导体处理反应器的温度控制
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Application No.: US10410699Application Date: 2003-04-08
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Publication No.: US07427329B2Publication Date: 2008-09-23
- Inventor: Vladimir Kuznetsov , Ernst H. A. Granneman
- Applicant: Vladimir Kuznetsov , Ernst H. A. Granneman
- Applicant Address: NL Bilthoven
- Assignee: ASM International N.V.
- Current Assignee: ASM International N.V.
- Current Assignee Address: NL Bilthoven
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/00 ; C23C14/00

Abstract:
A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing. Streams of gas may lift the substrate from the support structure so that the substrate floats. A plurality of heating elements is associated with at least one of the upper part and the bottom part and are arranged to define heating zones. A controller controls the heating elements individually so that each heating zone is configured to have a predetermined temperature determined by the controller. The heating zones provide for a non-uniform heating laterally across the substrate.
Public/Granted literature
- US20030209200A1 Temperature control for single substrate semiconductor processing reactor Public/Granted day:2003-11-13
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