Invention Grant
- Patent Title: Irreversible reduction of the value of a polycrystalline silicon resistor
- Patent Title (中): 多晶硅电阻值的不可逆减少
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Application No.: US10504274Application Date: 2003-02-11
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Publication No.: US07427802B2Publication Date: 2008-09-23
- Inventor: Luc Wuidart , Alexandre Malherbe , Michel Bardouillet
- Applicant: Luc Wuidart , Alexandre Malherbe , Michel Bardouillet
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Wolf, Greenfield & Sacks, P.C.
- Agent Lisa K. Jorgenson; James H. Morris
- Priority: FR0201635 20020211
- International Application: PCT/FR03/00445 WO 20030211
- International Announcement: WO03/069656 WO 20030821
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/326 ; H01C7/13
Abstract:
The invention relates to a method and device for the irreversible reduction of the value of an integrated polycrystalline silicon resistor. The inventive method consists in temporarily subjecting the resistor to a stress current which is greater than a current (Im) for which the value of the resistor is maximum.
Public/Granted literature
- US20050173779A1 Irreversible reduction of the value of a polycrystalline silicon resistor Public/Granted day:2005-08-11
Information query
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