摘要:
An integrated cell for extracting a binary value based on a value difference between two resistors values, including connection circuitry for a binary reading of the sign of the difference between the resistors, and connection circuitry for a modification of the value of one of the resistors to make the sign of the difference invariable.
摘要:
The invention relates to a method and device for the irreversible reduction of the value of an integrated polycrystalline silicon resistor. The inventive method consists in temporarily subjecting the resistor to a stress current which is greater than a current (Im) for which the value of the resistor is maximum.
摘要:
The invention relates to a one-time programmable memory cell and the programming method thereof. Thc invention comprises a programming transistor (MN) which is disposed in series with a polycrystalline silicon programming resistor (Rp) forming the memory element. According to the invention, the programming is non destructive with respect to the polycrystalline silicon resistor.
摘要:
An extraction method and an integrated cell for extracting a binary value based on a propagation of an edge of a triggering signal in two electric paths, including across two voltage supply terminals: two parallel branches each including, in series, a resistor for differentiating the electric paths; a read transistor, the junction point of the resistor and of the read transistor of each branch defining an output terminal of the cell, and the gate of the read transistor of each branch being connected to the output terminal of the other branch; and a selection transistor.
摘要:
An integrated cell and method for extracting a binary value based on a value difference between two resistors values, including connection circuitry for a binary reading of the sign of the difference between the resistors, and connection circuitry for a modification of the value of one of the resistors to make the sign of the difference invariable.
摘要:
An integrated cell for extracting a binary value based on a value difference between two resistors values, including connection circuitry for a binary reading of the sign of the difference between the resistors, and connection circuitry for a modification of the value of one of the resistors to make the sign of the difference invariable.
摘要:
The invention relates to a memory cell with a binary value consisting of two parallel branches. Each of said branches comprises: at least one polycrystalline silicon programming resistor (Rp1, Rp2), which is connected between a first supply terminal (1) and a point or terminal for the differential reading (4, 6) of the memory cell state; and at least one first switch (MNP1, MNP2) which, during programming, connects one of said read terminals to a second supply terminal (2).
摘要:
An integrated cell and method for extracting a binary value based on a value difference between two resistors values, including connection circuitry for a binary reading of the sign of the difference between the resistors, and connection circuitry for a modification of the value of one of the resistors to make the sign of the difference invariable.
摘要:
An integrated cell for extracting a binary value based on a value difference between two resistors values, including connection circuitry for a binary reading of the sign of the difference between the resistors, and connection circuitry for a modification of the value of one of the resistors to make the sign of the difference invariable.
摘要:
The invention relates to a method and device for the irreversible reduction of the value of an integrated polycrystalline silicon resistor. The inventive method consists in temporarily subjecting the resistor to a stress current which is greater than a current (Im) for which the value of the resistor is maximum.