发明授权
- 专利标题: Semiconductor device with layer containing polysiloxane compound
- 专利标题(中): 具有聚硅氧烷化合物层的半导体器件
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申请号: US11514922申请日: 2006-09-05
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公开(公告)号: US07435989B2公开(公告)日: 2008-10-14
- 发明人: Tomonari Nakayama , Akane Masumoto , Shintetsu Go , Toshinobu Ohnishi
- 申请人: Tomonari Nakayama , Akane Masumoto , Shintetsu Go , Toshinobu Ohnishi
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2005-258567 20050906
- 主分类号: H01L29/08
- IPC分类号: H01L29/08 ; H01L35/24 ; H01L51/00
摘要:
Provided is a semiconductor device including: a substrate; a layer containing one or more kinds of polymer compounds on the substrate; and an organic semiconductor layer in contact with the layer containing the one or more kinds of polymer compounds, in which at least one kind of the one or more kinds of polymer compounds is a polymer compound having one or more secondary or tertiary aliphatic amino groups, wherein the one or more aliphatic amino groups of the polymer compound having the aliphatic amino groups are bound to at least one of a side chain or a branched chain, and wherein said the layer containing the one or more kinds of polymer compounds contains polysiloxane compounds. With the constitution, a semiconductor device excellent in crystallinity and orientation can be provided.
公开/授权文献
- US20070051947A1 Semiconductor device 公开/授权日:2007-03-08