发明授权
US07439068B2 Plasma monitoring method, plasma processing method, method of manufacturing semiconductor device, and plasma processing system
失效
等离子体监测方法，等离子体处理方法，制造半导体器件的方法和等离子体处理系统
- 专利标题： Plasma monitoring method, plasma processing method, method of manufacturing semiconductor device, and plasma processing system
- 专利标题（中）： 等离子体监测方法，等离子体处理方法，制造半导体器件的方法和等离子体处理系统
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申请号： US10877391申请日： 2004-06-25
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公开(公告)号： US07439068B2公开(公告)日： 2008-10-21
- 发明人: Tetsuya Tatsumi
- 申请人： Tetsuya Tatsumi
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sonnenschein Nath & Rosenthal LLP
- 优先权： JPP2003-275124 20030716
- 主分类号： G01N33/00
- IPC分类号： G01N33/00 ; G01N35/08 ; H01L21/00
摘要：
Disclosed is a plasma monitoring method for detecting the amount of atomic radicals generated by dissociation of a molecular raw material gas during a plasma processing conducted by introducing the molecular raw material gas and a rare gas into a process atmosphere, wherein the amount of the atomic radicals is predicted from the dissociation degree of the molecular raw material gas determined from the partial pressure of the molecular raw material gas in the process atmosphere, the luminous intensity of the rare gas, and the partial pressure of the rare gas in the process atmosphere, whereby the amount of the specific atomic radicals can be monitored easily and accurately.
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