公开(公告)号：US09411914B2

公开(公告)日：2016-08-09

申请号：US13323373

申请日：2011-12-12

申请人： Nobuyuki Kuboi ,  Tetsuya Tatsumi

发明人： Nobuyuki Kuboi ,  Tetsuya Tatsumi

IPC分类号： G06F7/60 ,  G06F17/10 ,  G06F17/50

CPC分类号： G06F17/5009 ,  G06F2217/16

摘要： Disclosed herein is a simulator including: an input section adapted to acquire processing conditions for a given process performed on a workpiece; and a damage calculation section adapted to acquire the damage of the workpiece, based on the processing conditions, by calculating, using a Flux method, the relationship between the amount of a first substance externally injected onto a given evaluation point on the workpiece during the given process and the amount of a second substance released from the given evaluation point on the workpiece as a result of the injection of the first substance.

摘要翻译： 这里公开了一种模拟器，其包括：适于获取对工件执行的给定处理的处理条件的输入部分; 以及破坏计算部，根据加工条件，通过使用通量法计算在给定的工件上向外注入到工件上的给定评价点上的第一物质的量之间的关系，适于获取工件的损伤 过程和由于注入第一物质而从工件上的给定评估点释放的第二物质的量。

公开(公告)号：US20110160889A1

公开(公告)日：2011-06-30

申请号：US12962816

申请日：2010-12-08

申请人： Nobuyuki Kuboi ,  Tetsuya Tatsumi

发明人： Nobuyuki Kuboi ,  Tetsuya Tatsumi

IPC分类号： G05B13/04 ,  G05B13/02

CPC分类号： H01L21/67253 ,  H01J37/32522 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/31116

摘要： Disclosed herein is a semiconductor manufacturing device including, a chamber, a sensor, a sticking probability calculating section, an acting section, and a control section.

摘要翻译： 这里公开了一种半导体制造装置，包括室，传感器，粘附概率计算部，作用部和控制部。

公开(公告)号：US5378311A

公开(公告)日：1995-01-03

申请号：US156902

申请日：1993-11-24

申请人： Tetsuji Nagayama ,  Tetsuya Tatsumi

发明人： Tetsuji Nagayama ,  Tetsuya Tatsumi

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/677 ,  H01L21/683 ,  H05H1/46 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/02071 ,  H01J37/32834 ,  H01J37/32862 ,  H01L21/31138

摘要： A method in which in case different kinds of processing are consecutively conducted in a single chamber of a plasma device, a residual portion of a processing gas used in one process is prevented from affecting a next process, is disclosed. A chemical species resulting from the processing gas in one process is prevented from being generated in forming a plasma in the next processing, by introducing an inactive gas after the processing gas used in one processing is exhausted once, or by introducing the inactive gas while exhausting the processing gas, or by cyclically repeating exhaust of the processing gas and introduction of the inactive gas, prior to the next process. The degree of exhaust may be monitored on the basis of an emission spectrum of the plasma. If the exhaust is carried out between a dry etching process conducted while holding a substrate on a single electrode electrostatic chuck and a process of removing residual charge of the chuck in a state of non-bias application to the substrate, or between a just etching process and an over etching process, deterioration of an etching shape due to radicals in the plasma may be prevented.

摘要翻译： 公开了一种方法，其中在等离子体装置的单个室中连续执行不同种类的处理的情况下，防止在一个处理中使用的处理气体的残留部分影响下一个处理。 在一次处理中由处理气体产生的化学物质在下一个处理中通过在一个处理中使用的处理气体耗尽一次之后引入惰性气体，或通过在排出时引入惰性气体来防止在形成等离子体时产生 处理气体，或者在下一个处理之前循环重复处理气体的排气和惰性气体的引入。 可以基于等离子体的发射光谱监测排气度。 如果在将基板保持在单电极静电卡盘上进行的干蚀刻工艺和在基板的非偏压施加状态下去除卡盘的剩余电荷的过程之间进行排气，或者在刚刚蚀刻工艺 和过蚀刻工艺，可以防止由于等离子体中的自由基导致的蚀刻形状的劣化。

公开(公告)号：US5227341A

公开(公告)日：1993-07-13

申请号：US831846

申请日：1992-02-06

申请人： Yukihiro Kamide ,  Shingo Kadomura ,  Tetsuya Tatsumi

发明人： Yukihiro Kamide ,  Shingo Kadomura ,  Tetsuya Tatsumi

IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/02071 ,  G03F7/42 ,  H01L21/31138

摘要： An improved method of manufacturing a semiconductor device includes forming an insulating layer on a substrate, depositing a metal film layer on the insulating layer and depositing a photoresist layer on the metal film layer. The photoresist layer is formed with openings through which a predetermined surface of the metal film layer is exposed. The predetermined surface of the metal film layer is subjected to dry etching so that an underlying portion of the insulating layer is exposed. The remaining portion of the photoresist layer is then subjected to ashing by using an isopropyl alcohol-containing gas to expose the surface of said metal film layer.

摘要翻译： 制造半导体器件的改进方法包括在衬底上形成绝缘层，在绝缘层上沉积金属膜层，并在金属膜层上沉积光致抗蚀剂层。 光致抗蚀剂层形成有露出金属膜层的预定表面的开口。 对金属膜层的预定表面进行干蚀刻，以使绝缘层的下面部分露出。 然后通过使用含异丙醇的气体对光致抗蚀剂层的剩余部分进行灰化，以暴露所述金属膜层的表面。

公开(公告)号：US5211790A

公开(公告)日：1993-05-18

申请号：US841946

申请日：1992-02-26

申请人： Tetsuya Tatsumi

发明人： Tetsuya Tatsumi

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H05H1/46

CPC分类号： H01L21/32137 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/32139 ,  Y10S438/909

摘要： A method for anisotropic etching of a layer of a silicon-based material, using an SF.sub.6 gas, a versatile etching gas, is proposed. Sulfur (S) is used as a sidewall protection substance. This sulfur is not supplied into an etching reaction system on discharge dissociation of the etching gas, but is supplied by being sublimed off on heating from the inner wall surface of the etching chamber on which it is previously grown from a gaseous phase. Specifically, the S.sub.2 F.sub.2 gas is introduced while a predetermined region of the inner wall surface of the etching chamber is cooled, and preliminary discharge is carried out to deposit sulfur on the region. A SF.sub.6 containing etching gas is introduced into the chamber and the above mentioned region is heated for subliming S and simultaneously etching the layer of the silicon-based material. With this method, there is no necessity of using a specific etching gas capable of yielding free S in the plasma under discharge dissociating conditions. The present invention has an important significance as post-CFC (chlorofluorocarbon) gas measures. After end of etching, sulfur may be easily sublimed off by heating the wafer without the risk of pollution by particles.

摘要翻译： 提出了使用SF6气体，多功能蚀刻气体对硅系材料层进行各向异性蚀刻的方法。 硫（S）用作侧壁保护物质。 在蚀刻气体的放电解离时，这种硫没有被供给到蚀刻反应系统中，而是通过从其预先从气相生长的蚀刻室的内壁表面加热而提供。 具体地说，在蚀刻室的内壁面的规定区域被冷却的同时导入S2F2气体，进行初步排出以在该区域上沉积硫。 将含有SF6的蚀刻气体引入到室中，并且将上述区域加热以升华S并同时蚀刻硅基材料层。 通过该方法，不需要在放电解离条件下使用能够在等离子体中产生游离S的特定蚀刻气体。 本发明作为后氟氯化碳（氟氯化碳）气体措施具有重要意义。 在蚀刻结束后，通过加热晶片可以容易地升高硫，而不会有颗粒污染的风险。

公开(公告)号：US08535550B2

公开(公告)日：2013-09-17

申请号：US12858249

申请日：2010-08-17

申请人： Nobuyuki Kuboi ,  Takashi Kinoshita ,  Tetsuya Tatsumi

发明人： Nobuyuki Kuboi ,  Takashi Kinoshita ,  Tetsuya Tatsumi

IPC分类号： G06F19/00

CPC分类号： G06F17/5009 ,  H01J37/32935 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a shape simulation apparatus including: a flux computation block configured to compute the flux of particles incident on the surface of a wafer covered with a mask; and a shape computation block configured to compute a surface shape of the wafer by allowing the coordinates of a plurality of calculation points established on the surface of the wafer to be time-evolved based on the incident flux computed.

摘要翻译： 这里公开了一种形状模拟装置，包括：通量计算块，被配置为计算入射在被掩模覆盖的晶片的表面上的粒子的通量; 以及形状计算块，被配置为基于计算出的入射通量来允许在晶片表面上建立的多个计算点的坐标时间演化来计算晶片的表面形状。

公开(公告)号：US20120158379A1

公开(公告)日：2012-06-21

申请号：US13323373

申请日：2011-12-12

申请人： Nobuyuki Kuboi ,  Tetsuya Tatsumi

发明人： Nobuyuki Kuboi ,  Tetsuya Tatsumi

IPC分类号： G06F17/10

CPC分类号： G06F17/5009 ,  G06F2217/16

摘要： Disclosed herein is a simulator including: an input section adapted to acquire processing conditions for a given process performed on a workpiece; and a damage calculation section adapted to acquire the damage of the workpiece, based on the processing conditions, by calculating, using a Flux method, the relationship between the amount of a first substance externally injected onto a given evaluation point on the workpiece during the given process and the amount of a second substance released from the given evaluation point on the workpiece as a result of the injection of the first substance.

摘要翻译： 这里公开了一种模拟器，其包括：适于获取对工件执行的给定处理的处理条件的输入部分; 以及破坏计算部，根据加工条件，通过使用通量法计算在给定的工件上向外注入到工件上的给定评价点上的第一物质的量之间的关系，适于获取工件的损伤 过程和由于注入第一物质而从工件上的给定评估点释放的第二物质的量。

公开(公告)号：US07808026B2

公开(公告)日：2010-10-05

申请号：US12153848

申请日：2008-05-27

申请人： Toshiaki Shiraiwa ,  Tetsuya Tatsumi ,  Seiji Samukawa

发明人： Toshiaki Shiraiwa ,  Tetsuya Tatsumi ,  Seiji Samukawa

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/32136 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/12

摘要： Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.

摘要翻译： 提供一种能够优选刻蚀特别是用于MRAM的引脚层的PtMn的工艺是一种目标：通过使用脉冲等离子体对包括铂和/或锰的层进行干蚀刻的干式蚀刻方法和MRAM的制造方法 其中干蚀刻方法适用于针层的处理。 MRAM被配置为具有包括由通过堆叠具有固定磁化方向的磁性固定层，隧道势垒层和能够改变磁化方向的磁性层形成的隧道磁阻效应元件组成的磁存储元件的存储部分。

公开(公告)号：US20090162950A1

公开(公告)日：2009-06-25

申请号：US12332119

申请日：2008-12-10

申请人： Nobuyuki Kuboi ,  Tetsuya Tatsumi

发明人： Nobuyuki Kuboi ,  Tetsuya Tatsumi

IPC分类号： H01L21/02 ,  H01L21/3065

CPC分类号： H01J37/3299 ,  H01J37/32935

摘要： A dry etching equipment includes a topography simulator and a control section. The topography simulator controls an amount of deposition species incident upon a sidewall to be processed in accordance with a wafer opening ratio and a solid angle of a local pattern, the deposition amount being represented by a product of a reaction product flux and the solid angle. The control section compares a database obtained by the topography simulator with an actual measured value detected from an etching condition during dry etching to calculate a correction value for etching process, and indicates the correction value to an etching chamber in the dry etching equipment. The dry etching equipment corrects in real time a parameter for the etching process conducted in the etching chamber.

摘要翻译： 干蚀刻设备包括地形模拟器和控制部分。 地形模拟器根据晶片开口率和局部图案的立体角度来控制入射到待处理侧壁上的沉积物质的量，沉积量由反应产物通量和立体角的乘积表示。 控制部将通过地形模拟器获得的数据库与在干蚀刻期间的蚀刻条件检测到的实际测量值进行比较，以计算蚀刻处理的校正值，并将干涉蚀刻设备中的蚀刻室的校正值指示。 干蚀刻设备实时校正在蚀刻室中进行的蚀刻工艺的参数。

公开(公告)号：US07439068B2

公开(公告)日：2008-10-21

申请号：US10877391

申请日：2004-06-25

申请人： Tetsuya Tatsumi

发明人： Tetsuya Tatsumi

IPC分类号： G01N33/00 ,  G01N35/08 ,  H01L21/00

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32935 ,  H01L21/0271 ,  H01L21/28202 ,  Y10T436/12

摘要： Disclosed is a plasma monitoring method for detecting the amount of atomic radicals generated by dissociation of a molecular raw material gas during a plasma processing conducted by introducing the molecular raw material gas and a rare gas into a process atmosphere, wherein the amount of the atomic radicals is predicted from the dissociation degree of the molecular raw material gas determined from the partial pressure of the molecular raw material gas in the process atmosphere, the luminous intensity of the rare gas, and the partial pressure of the rare gas in the process atmosphere, whereby the amount of the specific atomic radicals can be monitored easily and accurately.

摘要翻译： 公开了一种等离子体监测方法，用于检测在通过将分子原料气体和稀有气体引入到处理气氛中进行的等离子体处理期间分子原料气体的解离产生的原子自由基的量，其中原子团的量 由处理气氛中的分子原料气体的分压，稀有气体的发光强度和处理气氛中的稀有气体的分压确定的分子原料气体的离解度进行预测，由此 可以容易且准确地监测特定原子团的量。