Invention Grant
- Patent Title: Transistors for semiconductor device and methods of fabricating the same
- Patent Title (中): 用于半导体器件的晶体管及其制造方法
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Application No.: US11045060Application Date: 2005-01-31
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Publication No.: US07439596B2Publication Date: 2008-10-21
- Inventor: Jae-Yoon Yoo , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee , Hyun-Suk Kim , Moon-Han Park
- Applicant: Jae-Yoon Yoo , Hwa-Sung Rhee , Tetsuji Ueno , Ho Lee , Seung-Hwan Lee , Hyun-Suk Kim , Moon-Han Park
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co, Ltd.
- Current Assignee: Samsung Electronics Co, Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Volentine & Whitt, PLLC.
- Priority: KR10-2004-0005858 20040129
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
The present invention discloses a transistor for a semiconductor device capable of preventing the generation of a depletion capacitance in a gate pattern due to the diffusion of impurity ions. The present invention also discloses a method of fabricating the transistor.
Public/Granted literature
- US20050170620A1 Transistors for semiconductor device and methods of fabricating the same Public/Granted day:2005-08-04
Information query
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