发明授权
- 专利标题： Method for removing nanoclusters from selected regions
- 专利标题（中）： 从选定区域去除纳米团簇的方法
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申请号： US11459837申请日： 2006-07-25
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公开(公告)号： US07445984B2公开(公告)日： 2008-11-04
- 发明人: Rajesh A. Rao , Tien Ying Luo , Ramachandran Muralidhar , Robert F. Steimle , Sherry G. Straub
- 申请人： Rajesh A. Rao , Tien Ying Luo , Ramachandran Muralidhar , Robert F. Steimle , Sherry G. Straub
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Robert L. King; James L. Clingan, Jr.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/4763 ; H01L21/8238 ; H01L21/36
摘要：
A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed on the semiconductor layer. A plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters over the second portion. The second plurality of nanoclusters is removed. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.
公开/授权文献
- US20080026526A1 METHOD FOR REMOVING NANOCLUSTERS FROM SELECTED REGIONS 公开/授权日：2008-01-31