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公开(公告)号：US20080026526A1
公开(公告)日：2008-01-31
申请号：US11459837
申请日：2006-07-25
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L21/28273 , H01L21/28282 , H01L21/32134 , H01L27/11526 , H01L27/11531 , H01L27/11573 , Y10S977/774 , Y10S977/779 , Y10S977/78 , Y10S977/943
摘要： A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed on the semiconductor layer. A plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters over the second portion. The second plurality of nanoclusters is removed. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.
摘要翻译： 制造半导体器件的方法包括具有半导体层的衬底，该半导体层具有用于非易失性存储器的第一部分和不包括第一部分的第二部分。 在半导体层上形成第一电介质层。 在第一电介质层上进行等离子体氮化。 在第一部分上形成第一多个纳米团簇，并在第二部分上形成第二多个纳米团簇。 第二组纳米团簇被去除。 在半导体层上方形成第二电介质层。 在第二电介质层上形成导电层。
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2.发明授权Method for retaining nanocluster size and electrical characteristics during processing 有权在加工过程中保留纳米簇粒径和电气特性的方法公开(公告)号：US07432158B1
公开(公告)日：2008-10-07
申请号：US11459843
申请日：2006-07-25
IPC分类号： H01L21/336 , H01L21/4763 , H01L21/8238 , H01L21/36
CPC分类号： H01L21/28273 , B82Y10/00 , H01L27/1052 , H01L27/11526 , H01L27/11531 , H01L29/42332 , H01L29/7881 , Y10S977/774 , Y10S977/779 , Y10S977/78 , Y10S977/943
摘要： A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed over the semiconductor layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters is formed over the second portion. A layer of nitrided oxide is formed around each nanocluster of the first plurality and the second plurality of nanoclusters. Remote plasma nitridation is performed on the layers of nitrided oxide of the first plurality of nanoclusters. The nanoclusters are removed from the second portion. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.
摘要翻译： 制造半导体器件的方法包括具有半导体层的衬底，该半导体层具有用于非易失性存储器的第一部分和不包括第一部分的第二部分。 第一介电层形成在半导体层上。 在第一部分上形成第一多个纳米团簇，并且在第二部分上形成第二多个纳米团簇。 在第一多个和第二多个纳米团簇的每个纳米簇周围形成氮化氧化物层。 在第一多个纳米团簇的氮化氧化物层上进行远程等离子体氮化。 从第二部分去除纳米团簇。 在半导体层上方形成第二电介质层。 在第二电介质层上形成导电层。
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3.发明授权公开(公告)号：US06949455B2
公开(公告)日：2005-09-27
申请号：US10677070
申请日：2003-10-01
申请人： Daniel Thanh-Khac Pham , Bich-Yen Nguyen , James K. Schaeffer , Melissa O. Zavala , Sherry G. Straub , Kimberly G. Reid , Marc Rossow , James P. Geren
发明人： Daniel Thanh-Khac Pham , Bich-Yen Nguyen , James K. Schaeffer , Melissa O. Zavala , Sherry G. Straub , Kimberly G. Reid , Marc Rossow , James P. Geren
IPC分类号： H01L21/28 , H01L21/8238 , H01L29/49 , H01L29/51 , H01L21/3205
CPC分类号： H01L29/517 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L21/823857 , H01L29/4933 , H01L29/51
摘要： A method for providing gates of transistors with at least two different work functions utilizes a silicidation of two different metals at different times, silicidation for one gate and polysilicon for the other, or silicidation using a single metal with two differently doped silicon structures. Thus the problem associated with performing silicidation of two different metals at the same time is avoided. If the two metals have significantly different silicidation temperatures, the one with the lower temperature silicidation will likely have significantly degraded performance as a result of having to also experience the higher temperature required to achieve silicidation with the other metal.
摘要翻译： 用于提供具有至少两种不同功函数的晶体管栅极的方法利用两种不同金属在不同时间的硅化，一个栅极的硅化，另一个的硅化，或使用具有两个不同掺杂硅结构的单一金属的硅化。 因此，避免了与同时进行两种不同金属的硅化相关的问题。 如果两种金属具有明显不同的硅化物温度，则由于必须也经历用其它金属进行硅化所需的较高温度，具有较低温度硅化的温度可能会显着降低性能。
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公开(公告)号：US07445984B2
公开(公告)日：2008-11-04
申请号：US11459837
申请日：2006-07-25
IPC分类号： H01L21/336 , H01L21/4763 , H01L21/8238 , H01L21/36
CPC分类号： H01L21/28273 , H01L21/28282 , H01L21/32134 , H01L27/11526 , H01L27/11531 , H01L27/11573 , Y10S977/774 , Y10S977/779 , Y10S977/78 , Y10S977/943
摘要： A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed on the semiconductor layer. A plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters over the second portion. The second plurality of nanoclusters is removed. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.
摘要翻译： 制造半导体器件的方法包括具有半导体层的衬底，该半导体层具有用于非易失性存储器的第一部分和不包括第一部分的第二部分。 在半导体层上形成第一电介质层。 在第一电介质层上进行等离子体氮化。 在第一部分上形成第一多个纳米团簇，并在第二部分上形成第二多个纳米团簇。 第二组纳米团簇被去除。 在半导体层上方形成第二电介质层。 在第二电介质层上形成导电层。
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