发明授权
US07446049B2 Method for fabricating semiconductor device using amorphous carbon layer as sacrificial hard mask
有权
使用无定形碳层作为牺牲硬掩模制造半导体器件的方法
- 专利标题： Method for fabricating semiconductor device using amorphous carbon layer as sacrificial hard mask
- 专利标题（中）： 使用无定形碳层作为牺牲硬掩模制造半导体器件的方法
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申请号： US11149326申请日： 2005-06-10
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公开(公告)号： US07446049B2公开(公告)日： 2008-11-04
- 发明人: Kwang-Ok Kim , Yun-Seok Cho
- 申请人： Kwang-Ok Kim , Yun-Seok Cho
- 申请人地址： KR Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-do
- 代理机构： Finnegan, Henderson, Farabow, Garrett, & Dunner L.L.P.
- 优先权： KR10-2004-0059535 20040729
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
Disclosed is a method for fabricating a semiconductor device by using an amorphous carbon layer as a sacrificial hard mask. The method includes the steps of: forming an amorphous carbon layer on an etch target layer; forming a photoresist pattern on the amorphous carbon layer; etching the amorphous carbon layer by using the photoresist pattern to form a sacrificial hard mask; and etching the etch target layer by using the sacrificial hard mask to form a predetermined pattern.
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