公开(公告)号：US08548329B2

公开(公告)日：2013-10-01

申请号：US12817279

申请日：2010-06-17

申请人： Kwang Ok Kim ,  Kyeong Hwan Doo ,  Sang Soo Lee

发明人： Kwang Ok Kim ,  Kyeong Hwan Doo ,  Sang Soo Lee

IPC分类号： H04J14/00

CPC分类号： H04J14/0282 ,  H04J3/0685 ,  H04J14/0246 ,  H04J14/0247 ,  H04J14/025 ,  H04J14/0252

摘要： A relaying method of an optical signal of a hybrid relaying apparatus in a gigabit passive optical element includes: selecting and receiving any one of a first serial electrical signal corresponding to a downlink wavelength division multiplexing-passive optical line terminal (WDM-PON OLT) optical signal and a second serial electrical signal corresponding to a downlink gigabit passive optical network optical line terminal (GPON OLT) optical signal; modulating the downlink serial electrical signal to a downlink GPON transmission convergence (GTC) frame; extracting control information for uplink transmission from the downlink GTC frame; converting the downlink GTC frame into the downlink serial electrical signal; and converting the converted serial electrical signal into an optical signal and transmitting the converted optical signal in a GPON OLT optical transceiver.

摘要翻译： 千兆无源光学元件中的混合中继装置的光信号的中继方法包括：选择和接收与下行波分复用无源光线路终端（WDM-PON OLT）光学对应的第一串行电信号 信号和对应于下行千兆无源光网络光线路终端（GPON OLT）光信号的第二串行电信号; 将下行链路串行电信号调制到下行链路GPON传输收敛（GTC）帧; 从下行链路GTC帧提取用于上行链路传输的控制信息; 将下行链路GTC帧转换为下行链路串行电信号; 并将转换的串行电信号转换为光信号，并在GPON OLT光收发器中发送转换的光信号。

公开(公告)号：US20120163802A1

公开(公告)日：2012-06-28

申请号：US13334147

申请日：2011-12-22

申请人： Kwang-Ok KIM ,  Eun-Gu LEE ,  Eui-Suk JUNG ,  Sang-Soo LEE ,  Tae-Whan YOO

发明人： Kwang-Ok KIM ,  Eun-Gu LEE ,  Eui-Suk JUNG ,  Sang-Soo LEE ,  Tae-Whan YOO

IPC分类号： H04B10/08

CPC分类号： H04B10/032 ,  H04B10/07 ,  H04J14/0223 ,  H04J14/0246 ,  H04J14/0247 ,  H04J14/025 ,  H04J14/0252 ,  H04J14/0265 ,  H04J14/0282 ,  H04J14/0291

摘要： A wavelength division multiplexing (WDM)-time division multiplexing (TDM) passive optical network (PON) remote terminal (RT) is provided. The wavelength division multiplexing (WDM)-time division multiplexing (TDM) passive optical network (PON) remote terminal (RT), includes: a WDM-TDM converter configured to convert a WDM downstream optical signal that is received from a central office terminal (COT) into a TDM downstream optical signal or to convert a TDM upstream optical signal that is received from an optical network terminal (ONT) into a WDM upstream optical signal; an error detector configured to detect an error; and a controller configured to, in response to an error being detected, transmit the WDM upstream optical signal to the COT via a first standby link or transmit the TDM downstream optical signal to the ONT via a second standby link.

摘要翻译： 提供了波分复用（WDM） - 时分复用（TDM）无源光网络（PON）远程终端（RT）。 波分复用（WDM）时分复用（TDM）无源光网络（PON）远程终端（RT）包括：WDM-TDM转换器，被配置为转换从中心局终端接收的WDM下行光信号 COT）转换成TDM下行光信号或将从光网络终端（ONT）接收的TDM上行光信号转换为WDM上行光信号; 错误检测器，被配置为检测错误; 以及控制器，被配置为响应于检测到的错误，经由第一备用链路将所述WDM上行光信号发送到所述COT，或经由第二备用链路将所述TDM下行光信号发送到所述ONT。

公开(公告)号：US20110020002A1

公开(公告)日：2011-01-27

申请号：US12812329

申请日：2009-04-22

申请人： Bin-yeong Yoon ,  Kwang-ok Kim ,  Hark Yoo ,  Mun-seob Lee ,  Jai-sang Koh

发明人： Bin-yeong Yoon ,  Kwang-ok Kim ,  Hark Yoo ,  Mun-seob Lee ,  Jai-sang Koh

IPC分类号： H04B10/20

CPC分类号： H04J3/1694 ,  H04B10/272

摘要： An Optical Line Terminal (OLT) configuring a Passive Optical Network (PON) is provided. The OLT includes an optical transmitter that transmits an optical signal to Optical Network Units (ONUs) in a downstream direction, an optical receiver that includes general Continuous Mode (CM) signal processing elements to recover clocks and data from optical signals transmitted by ONUs in an upstream direction, and a controller that controls the ONUs such that the optical receiver continuously receives an optical signal. An OLT interface for receiving an optical signal can be implemented using the general CM signal processing elements.

摘要翻译： 提供了一种配置无源光网络（PON）的光线路终端（OLT）。 OLT包括一个向下行方向发送光信号到光网络单元（ONU）的光发射机，包括通用连续模（CM）信号处理单元的光接收机，用于从ONU发射的光信号恢复时钟和数据 以及控制ONU，使得光接收机连续接收光信号的控制器。 用于接收光信号的OLT接口可以使用通用CM信号处理元件来实现。

公开(公告)号：US20100272259A1

公开(公告)日：2010-10-28

申请号：US12747345

申请日：2009-07-16

申请人： Kwang-ok Kim ,  Geun-yong Kim ,  Dong-soo Lee

发明人： Kwang-ok Kim ,  Geun-yong Kim ,  Dong-soo Lee

IPC分类号： H04K1/00 ,  H04L9/08

CPC分类号： H04L9/32 ,  H04L9/0816 ,  H04L9/0825 ,  H04L63/0236 ,  H04L63/0442 ,  H04L63/061 ,  H04L63/0876 ,  H04L63/162 ,  H04Q11/0067

摘要： Disclosed is a method of registering only an authorized optical network terminal among a plurality of optical network terminals with the same serial number, in an optical line terminal, using a public key encryption algorithm, in a Gigabit Passive Optical Network (GPON). According to an exemplary aspect, a GPON system encrypts a physical layer OAM message transmitted/received for serial number registration of an optical network terminal, using a key distributed according to a public key encryption algorithm, and authenticates registration of the optical network terminal using the encrypted physical layer OAM message. Accordingly, it is possible to securely authenticate registration of an authorized optical network terminal and block registration of unauthorized optical network terminals.

摘要翻译： 公开了一种在千兆无源光网络（GPON）中在光线路终端中使用公开密钥加密算法在仅具有相同序列号的多个光网络终端中注册授权的光网络终端的方法。 根据示例性方面，GPON系统使用根据公共密钥加密算法分发的密钥来加密发送/接收的用于光网络终端的序列号登记的物理层OAM消息，并且使用所述光网络终端对所述光网络终端的注册进行认证 加密物理层OAM消息。 因此，可以安全地认证授权的光网络终端的注册并阻止未经授权的光网络终端的登记。

公开(公告)号：US20080003833A1

公开(公告)日：2008-01-03

申请号：US11679179

申请日：2007-02-26

申请人： Kwang-Ok Kim

发明人： Kwang-Ok Kim

IPC分类号： H01L21/336 ,  H01L27/108

CPC分类号： H01L29/66795 ,  H01L27/0207 ,  H01L27/10876 ,  H01L27/10879 ,  H01L29/7851

摘要： A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis includes a first fin mask of a line type, and a second fin mask of an island type, wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.

摘要翻译： 用于在具有一定长度和短轴的岛状形成的有源区域中形成鞍形翅片的翅片掩模包括线型的第一鳍式掩模和岛状的第二鳍式掩模， 其中所述第一鳍片掩模和所述第二鳍片掩模组合地沿着所述长轴方向暴露所述相邻有源区域的鞍状翅片区域和覆盖端部。

公开(公告)号：US20070148885A1

公开(公告)日：2007-06-28

申请号：US11450658

申请日：2006-06-08

申请人： Kwang-Ok Kim ,  Young-Kyun Jung

发明人： Kwang-Ok Kim ,  Young-Kyun Jung

IPC分类号： H01L21/336

CPC分类号： H01L21/28035 ,  H01L21/823842

摘要： A method for fabricating a semiconductor device with a dual gate structure is provided. The method includes: forming a gate oxide layer over a substrate; forming a gate conductive layer over the gate oxide layer; forming an amorphous carbon layer over the gate conductive layer; forming a photosensitive pattern over the amorphous carbon layer; etching the amorphous carbon layer using the photosensitive pattern as an etch mask to form a patterned amorphous carbon layer; performing an ion implantation process using the patterned amorphous carbon layer as an ion implantation barrier to implant an impurity onto the gate conductive layer; removing the patterned amorphous carbon layer; and patterning the gate conductive layer to form a gate structure.

摘要翻译： 提供一种制造具有双栅结构的半导体器件的方法。 该方法包括：在衬底上形成栅氧化层; 在所述栅极氧化物层上形成栅极导电层; 在所述栅极导电层上形成非晶碳层; 在所述无定形碳层上形成感光图案; 使用感光图案作为蚀刻掩模蚀刻非晶碳层以形成图案化的无定形碳层; 使用图案化的非晶碳层作为离子注入势垒进行离子注入工艺，以将杂质注入到栅极导电层上; 去除图案化的无定形碳层; 以及图案化栅极导电层以形成栅极结构。

公开(公告)号：US20060079093A1

公开(公告)日：2006-04-13

申请号：US11149325

申请日：2005-06-10

申请人： Kwang-Ok Kim ,  Yun-Seok Cho ,  Seung-Chan Moon ,  Jin-Ki Jung ,  Sung-Kwon Lee ,  Jun-Hyeub Sun ,  Dong-Duk Lee ,  Jin-Woong Kim ,  Gyu-Han Yoon

发明人： Kwang-Ok Kim ,  Yun-Seok Cho ,  Seung-Chan Moon ,  Jin-Ki Jung ,  Sung-Kwon Lee ,  Jun-Hyeub Sun ,  Dong-Duk Lee ,  Jin-Woong Kim ,  Gyu-Han Yoon

IPC分类号： H01L21/461

CPC分类号： H01L21/76802 ,  H01L21/0332 ,  H01L21/28123 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L27/10894

摘要： The present invention relates to a method for fabricating a semiconductor device using tungsten as a sacrificial hard mask material. The method includes the steps of: forming a layer on an etch target layer; forming a photoresist pattern on the layer; etching the layer by using the photoresist pattern as an etch mask along with use of a plasma containing CHF3 gas to form a sacrificial hard mask; and etching the etch target layer by using at least the sacrificial hard mask as an etch mask, thereby obtaining a predetermined pattern.

摘要翻译： 本发明涉及使用钨作为牺牲硬掩模材料制造半导体器件的方法。 该方法包括以下步骤：在蚀刻目标层上形成层; 在该层上形成光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模以及使用含有CHF 3 N 3气体的等离子体来蚀刻该层以形成牺牲硬掩模; 并且通过使用至少牺牲硬掩模作为蚀刻掩模来蚀刻蚀刻目标层，由此获得预定图案。

公开(公告)号：US20060024945A1

公开(公告)日：2006-02-02

申请号：US11149326

申请日：2005-06-10

申请人： Kwang-Ok Kim ,  Yun-Seok Cho

发明人： Kwang-Ok Kim ,  Yun-Seok Cho

IPC分类号： H01L21/469

CPC分类号： H01L21/02115 ,  H01L21/0332 ,  H01L21/3146 ,  H01L21/32139

摘要： Disclosed is a method for fabricating a semiconductor device by using an amorphous carbon layer as a sacrificial hard mask. The method includes the steps of: forming an amorphous carbon layer on an etch target layer; forming a photoresist pattern on the amorphous carbon layer; etching the amorphous carbon layer by using the photoresist pattern to form a sacrificial hard mask; and etching the etch target layer by using the sacrificial hard mask to form a predetermined pattern.

摘要翻译： 公开了通过使用无定形碳层作为牺牲硬掩模来制造半导体器件的方法。 该方法包括以下步骤：在蚀刻目标层上形成无定形碳层; 在所述无定形碳层上形成光致抗蚀剂图案; 通过使用光致抗蚀剂图案来蚀刻非晶碳层以形成牺牲硬掩模; 并通过使用牺牲硬掩模蚀刻蚀刻目标层以形成预定图案。

公开(公告)号：US07797745B2

公开(公告)日：2010-09-14

申请号：US11266627

申请日：2005-11-03

申请人： Kyeong Soo Han ,  Kwang Ok Kim ,  Tae Whan Yoo

发明人： Kyeong Soo Han ,  Kwang Ok Kim ,  Tae Whan Yoo

IPC分类号： G06F12/14

CPC分类号： H04L63/126 ,  H04L9/0631 ,  H04L9/0637 ,  H04L9/3242 ,  H04L63/1458

摘要： An apparatus and method for providing a security function of frames transmitted between optical network terminals (OLTs) and optical network units (ONUs) in an Ethernet passive optical network (EPON) providing media access control (MAC) services are provided. The apparatus includes: a frame classifier distinguishing the type of a frame, and based on the logical link identifier (LLID) of the distinguished frame, determining whether or not the frame is a security link to which a security function is to be applied; a bypass unit delaying a no-security-function frame so that a processing time for converting the security-function-applied frame classified in the frame classifier into an encrypted frame is the same as a time for processing the no-security-function frame; and a parameter generation unit transmitting in relation to each of the LLIDs, a parameter set value including a security-function-application setting signal used in the encryption, decryption and authentication of the frame, a frame decryption signal, an encryption mode selection signal, and an authentication intensity adjustment signal.

摘要翻译： 提供了一种在提供媒体访问控制（MAC）服务的以太网无源光网络（EPON）中提供在光网络终端（OLT）和光网络单元（ONU）之间传输的帧的安全功能的装置和方法。 该装置包括：区分帧的类型的帧分类器，并且基于识别帧的逻辑链路标识符（LLID），确定帧是否是要应用安全功能的安全链路; 旁路单元延迟无安全功能帧，使得将分类在帧分类器中的安全功能应用帧转换为加密帧的处理时间与用于处理无安全功能帧的时间相同; 以及相关于每个所述LLID发送的参数生成单元，包括在所述帧的加密，解密和认证中使用的安全功能应用设置信号的参数设置值，帧解密信号，加密模式选择信号， 和认证强度调整信号。

公开(公告)号：US20090289297A1

公开(公告)日：2009-11-26

申请号：US12333253

申请日：2008-12-11

申请人： Kwang-Ok KIM ,  Hye-Ran Kang

发明人： Kwang-Ok KIM ,  Hye-Ran Kang

IPC分类号： H01L29/78 ,  H01L21/3205

CPC分类号： H01L29/792 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/512

摘要： A charge trap-type non-volatile memory device, and related method, includes forming over a substrate a tunnel insulating layer, a charge trapping layer, a dielectric layer, and a conductive layer for a gate electrode; forming a gate electrode by selectively etching the conductive layer for the gate electrode; forming a spacer including a first spacer and a second spacer on a sidewall of the gate electrode, the second spacer being formed of material different from that of the first spacer; and etching the dielectric layer and the charge trapping layer by using the spacer as an etching barrier, thereby preventing an attack to the gate electrode when etching the charge trapping layer and thus enhancing reliability and stability of transistors. In addition, in one or more embodiments, a sidewall of the charge trapping layer pattern is formed vertically, thereby preventing formation of a tail and an attack to the substrate.

摘要翻译： 电荷阱型非易失性存储器件及相关方法包括在衬底上形成用于栅电极的隧道绝缘层，电荷俘获层，电介质层和导电层; 通过选择性地蚀刻用于栅电极的导电层来形成栅电极; 在所述栅电极的侧壁上形成包括第一间隔物和第二间隔物的间隔物，所述第二间隔物由与所述第一间隔物的材料不同的材料形成; 并且通过使用间隔物作为蚀刻阻挡层来蚀刻电介质层和电荷俘获层，从而防止在蚀刻电荷捕获层时对栅电极的攻击，从而提高晶体管的可靠性和稳定性。 此外，在一个或多个实施例中，电荷捕获层图案的侧壁垂直地形成，从而防止尾部的形成和对基板的攻击。