发明授权
- 专利标题： Differential wavelength photoluminescence for non-contact measuring of contaminants and defects located below the surface of a wafer or other workpiece
- 专利标题（中）： 用于非接触式测量污染物和位于晶片或其他工件表面下方的缺陷的差分光致发光
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申请号： US11427080申请日： 2006-06-28
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公开(公告)号： US07446321B2公开(公告)日： 2008-11-04
- 发明人: Nicolas Laurent , Andrzej Buczkowski , Steven G. Hummel , Tom Walker , Amit Shachaf
- 申请人： Nicolas Laurent , Andrzej Buczkowski , Steven G. Hummel , Tom Walker , Amit Shachaf
- 申请人地址： US CA Milpitas
- 专利权人： Nanometrics Incorporated
- 当前专利权人： Nanometrics Incorporated
- 当前专利权人地址： US CA Milpitas
- 代理机构： Silicon Valley Patent Group LLP
- 代理商 Michael J. Halbert
- 主分类号： G01N21/64
- IPC分类号： G01N21/64 ; G01J1/58
摘要：
A method for using photoluminescence to identify defects in a sub-surface region of a sample includes performing a first probe of the sample. A first data set, based on the first probe, is produced indicating defects located primarily in a surface layer of the sample. A second data set, based on a second probe, is produced indicating defects located in both the surface layer and a sub-surface region of the sample. The first data set is subtracted from the second data set to produce a third data set indicating defects located primarily in the sub-surface region of the sample. The first data set may optionally be normalized relative to the second data set before performing the subtraction. The first and second probes may advantageously be performed using a first laser and a second laser, respectively, having different wavelengths from each other.
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