Invention Grant
- Patent Title: Composite barrier layer
- Patent Title (中): 复合阻挡层
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Application No.: US11024916Application Date: 2004-12-28
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Publication No.: US07453149B2Publication Date: 2008-11-18
- Inventor: Cheng-Lin Huang , Ching-Hua Hsieh , Hsien-Ming Lee , Shing-Chyang Pan , Chao-Hsien Peng , Li-Lin Su , Jing-Cheng Lin , Shao-Lin Shue , Mong-Song Liang
- Applicant: Cheng-Lin Huang , Ching-Hua Hsieh , Hsien-Ming Lee , Shing-Chyang Pan , Chao-Hsien Peng , Li-Lin Su , Jing-Cheng Lin , Shao-Lin Shue , Mong-Song Liang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A composite barrier layer provides superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer are generally disposed to form boundaries with dielectric materials and crystalline layers are generally disposed to form boundaries with conductive materials such as interconnect materials.
Public/Granted literature
- US20060027925A1 Composite barrier layer Public/Granted day:2006-02-09
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