公开(公告)号：US20090047780A1

公开(公告)日：2009-02-19

申请号：US12287516

申请日：2008-10-10

Applicant: Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

Inventor： Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

IPC: H01L21/44

CPC classification number: H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  Y10S438/927

Abstract: Provided is a method for forming a composite barrier layer with superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer generally form boundaries with dielectric materials and crystalline layers generally form boundaries with conductive materials such as interconnect materials.

Abstract translation: 提供了一种形成复合阻挡层的方法，该复合阻挡层具有优异的阻挡性能，并且当复合阻挡层贯穿整个半导体器件时，两种电介质材料和导电材料具有优异的粘合性能。 复合阻挡层可以形成在其设置在两个导电层之间的区域中，并且在其布置在导电层和电介质材料之间的区域中。 复合阻挡层可以由各种多个层组成，并且形成复合阻挡层的层的布置可以随着阻挡层在装置的不同部分延伸而不同。 复合阻挡层的非晶层通常与电介质材料形成边界，并且结晶层通常与诸如互连材料的导电材料形成边界。

公开(公告)号：US07453149B2

公开(公告)日：2008-11-18

申请号：US11024916

申请日：2004-12-28

Applicant: Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

Inventor： Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

IPC: H01L23/48

CPC classification number: H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  Y10S438/927

Abstract: A composite barrier layer provides superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer are generally disposed to form boundaries with dielectric materials and crystalline layers are generally disposed to form boundaries with conductive materials such as interconnect materials.

Abstract translation: 当复合阻挡层延伸穿过整个半导体器件时，复合阻挡层为介电材料和导电材料提供优异的阻挡质量和优异的粘合性能。 复合阻挡层可以形成在其设置在两个导电层之间的区域中，并且在其布置在导电层和电介质材料之间的区域中。 复合阻挡层可以由各种多个层组成，并且形成复合阻挡层的层的布置可以随着阻挡层在装置的不同部分延伸而不同。 复合阻挡层的非晶层通常设置成与电介质材料形成边界，并且通常设置结晶层以与诸如互连材料的导电材料形成边界。

公开(公告)号：US20060027925A1

公开(公告)日：2006-02-09

申请号：US11024916

申请日：2004-12-28

Applicant: Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

Inventor： Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

IPC: H01L29/788

CPC classification number: H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  Y10S438/927

Abstract: A composite barrier layer provides superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer are generally disposed to form boundaries with dielectric materials and crystalline layers are generally disposed to form boundaries with conductive materials such as interconnect materials.

Abstract translation: 当复合阻挡层延伸穿过整个半导体器件时，复合阻挡层为介电材料和导电材料提供优异的阻挡质量和优异的粘合性能。 复合阻挡层可以形成在其设置在两个导电层之间的区域中，并且在其布置在导电层和电介质材料之间的区域中。 复合阻挡层可以由各种多个层组成，并且形成复合阻挡层的层的布置可以随着阻挡层在装置的不同部分延伸而不同。 复合阻挡层的非晶层通常设置成与电介质材料形成边界，并且通常设置结晶层以与诸如互连材料的导电材料形成边界。

公开(公告)号：US08034709B2

公开(公告)日：2011-10-11

申请号：US12287516

申请日：2008-10-10

Applicant: Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

Inventor： Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

IPC: H01L21/4763

CPC classification number: H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  Y10S438/927

Abstract: Provided is a method for forming a composite barrier layer with superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer generally form boundaries with dielectric materials and crystalline layers generally form boundaries with conductive materials such as interconnect materials.

Abstract translation: 提供了一种形成复合阻挡层的方法，该复合阻挡层具有优异的阻挡性能，并且当复合阻挡层贯穿整个半导体器件时，两种介电材料和导电材料具有优异的粘合性能。 复合阻挡层可以形成在其设置在两个导电层之间的区域中，并且在其布置在导电层和电介质材料之间的区域中。 复合阻挡层可以由各种多个层组成，并且形成复合阻挡层的层的布置可以随着阻挡层在装置的不同部分延伸而不同。 复合阻挡层的非晶层通常与电介质材料形成边界，并且结晶层通常与诸如互连材料的导电材料形成边界。