发明授权
- 专利标题： Method for improving a semiconductor device delamination resistance
- 专利标题（中）： 提高半导体器件耐分层性的方法
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申请号： US10884719申请日： 2004-07-03
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公开(公告)号： US07456093B2公开(公告)日： 2008-11-25
- 发明人: Pi-Tsung Chen , Keng-Chu Lin , Hui-Lin Chang , Lih-Ping Li , Tien-I Bao , Yung-Cheng Lu , Syun-Ming Jang
- 申请人： Pi-Tsung Chen , Keng-Chu Lin , Hui-Lin Chang , Lih-Ping Li , Tien-I Bao , Yung-Cheng Lu , Syun-Ming Jang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Tung & Associates
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44
摘要：
A semiconductor device with improved resistance to delamination and method for forming the same the method including providing a semiconductor wafer comprising a metallization layer with an uppermost etch stop layer; forming at least one adhesion promoting layer on the etch stop layer; and, forming an inter-metal dielectric (IMD) layer on the at least one adhesion promoting layer.
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