发明授权
- 专利标题: Eutectic bonding of ultrathin semiconductors
- 专利标题(中): 超薄半导体的共晶键合
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申请号: US11390772申请日: 2006-03-28
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公开(公告)号: US07476606B2公开(公告)日: 2009-01-13
- 发明人: Dean Tran , Alan Hirschberg , Ha K. DeMarco , Luis Rochin , Thomas Chung , Mark Kintis , Steven J. Mass
- 申请人: Dean Tran , Alan Hirschberg , Ha K. DeMarco , Luis Rochin , Thomas Chung , Mark Kintis , Steven J. Mass
- 申请人地址: US CA Los Angeles
- 专利权人: Northrop Grumman Corporation
- 当前专利权人: Northrop Grumman Corporation
- 当前专利权人地址: US CA Los Angeles
- 代理机构: Patti, Hewitt & Arezina LLC
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/28
摘要:
Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.
公开/授权文献
- US20070235744A1 Eutectic bonding of ultrathin semiconductors 公开/授权日:2007-10-11
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