Eutectic bonding of ultrathin semiconductors
    1.
    发明授权
    Eutectic bonding of ultrathin semiconductors 失效
    超薄半导体的共晶键合

    公开(公告)号:US07476606B2

    公开(公告)日:2009-01-13

    申请号:US11390772

    申请日:2006-03-28

    IPC分类号: H01L21/00 H01L21/28

    CPC分类号: H01L21/2007

    摘要: Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.

    摘要翻译: 通常非常薄且因此非常脆弱的超高速半导体仍需要连接到电路板和传热通路。 超高速电路和半导体器件具有通过各种沉积方法形成在晶片或衬底的背面上的载体板。 载体板是一系列金属层,每个金属层被选择为能够将相对厚的铜载体板附接到基板或晶片的背面。

    Eutectic bonding of ultrathin semiconductors
    3.
    发明申请
    Eutectic bonding of ultrathin semiconductors 失效
    超薄半导体的共晶键合

    公开(公告)号:US20070235744A1

    公开(公告)日:2007-10-11

    申请号:US11390772

    申请日:2006-03-28

    IPC分类号: H01L33/00

    CPC分类号: H01L21/2007

    摘要: Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.

    摘要翻译: 通常非常薄且因此非常脆弱的超高速半导体仍需要连接到电路板和传热通路。 超高速电路和半导体器件具有通过各种沉积方法形成在晶片或衬底的背面上的载体板。 载体板是一系列金属层,每个金属层被选择为能够将相对厚的铜载体板附接到基板或晶片的背面。