发明授权
- 专利标题： Plasma process system and plasma process method
- 专利标题（中）： 等离子体工艺系统和等离子体处理方法
-
申请号： US10623866申请日： 2003-07-22
-
公开(公告)号： US07481886B2公开(公告)日： 2009-01-27
- 发明人: Yoshihiro Kato , Tadashi Goto , Hikaru Yoshitaka , Makoto Aoki
- 申请人： Yoshihiro Kato , Tadashi Goto , Hikaru Yoshitaka , Makoto Aoki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Crowell & Moring LLP
- 优先权： JP2001-13570 20010122; JP2001-14011 20010123
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; C23C16/00
摘要：
A first channel is formed in the side of a first diffusion plate which is on that side of a gas inlet tube and a recess is formed in the side which is on that side of an electrode plate. The first channel and the recess communicate with each other through a plurality of inlet ports. The first channel and the inlet ports form a gas flow passage L which leads to the recess from the gas inlet tube. As a process gas supplied from the gas inlet tube passes through the gas flow passage L, it is supplied, dispersed, to a hollow portion formed between the recess and the electrode plate.
公开/授权文献
- US20040134611A1 Plasma process system and plasma process method 公开/授权日：2004-07-15