发明授权
- 专利标题： Method of forming titanium film by CVD
- 专利标题（中）： 通过CVD形成钛膜的方法
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申请号： US11028736申请日： 2005-01-05
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公开(公告)号： US07484513B2公开(公告)日： 2009-02-03
- 发明人: Kunihiro Tada , Hayashi Otsuki
- 申请人： Kunihiro Tada , Hayashi Otsuki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Smith, Gambrell & Russell, LLP
- 优先权： JP1997-366066 19971224
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.
公开/授权文献
- US20050136660A1 Method of forming titanium film by CVD 公开/授权日：2005-06-23
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