公开(公告)号：US07484513B2

公开(公告)日：2009-02-03

申请号：US11028736

申请日：2005-01-05

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76855

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过CVD法形成的Si膜上形成的绝缘膜上形成的Ti膜或通过本发明的方法形成在Si衬底上的Si膜上形成Ti膜。 该方法包括将Si衬底加载到成膜室中的步骤; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在500℃或更低温度下被加热。 SiH 4气体的流量为TiCl 4气体流量的30-70％。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US06841203B2

公开(公告)日：2005-01-11

申请号：US10216398

申请日：2002-08-12

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： C23C16/04 ,  C23C16/08 ,  H01L21/768 ,  H05H1/24

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76855

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过CVD法形成的Si膜上形成的绝缘膜上形成的Ti膜或通过本发明的方法形成在Si衬底上的Si膜上形成Ti膜。 该方法包括以下步骤：将Si衬底加载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在500℃或更低温度下被加热。 SiH 4气体的流量为TiCl 4气体流量的30-70％。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US06919273B1

公开(公告)日：2005-07-19

申请号：US10148952

申请日：1999-12-09

申请人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

发明人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L27/108 ,  H01L29/49 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C23C16/45514 ,  C23C16/34 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76871 ,  H01L23/485 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75 ,  H01L29/4966 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.

摘要翻译： 使用TiSiN膜作为半导体器件的阻挡金属层，以防止Cu的扩散。 TiSiN膜通过等离子体CVD法或热CVD法形成。 使用TiCl 4气体，氢化硅气体和NH 3气体作为用于通过热CVD法形成TiSiN膜的源气体。 使用TiCl 4气体，氢化硅气体，H 2气体和N 2气体作为用于通过等离子体形成TiSiN膜的源气体 CVD工艺。

公开(公告)号：US06451388B1

公开(公告)日：2002-09-17

申请号：US09713008

申请日：2000-11-16

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： H05H124

CPC分类号： H01L21/76855 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76843

摘要： A Ti film is formed by chemical vapor deposition in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at a temperature of from 550 to 700° C. during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过在Si衬底上形成的绝缘膜中形成的孔中或在Si衬底上形成的Si膜上的化学气相沉积形成Ti膜，该方法包括以下步骤：将Si衬底装载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 在沉积Ti膜期间，Si衬底在550-700℃的温度下被加热，并调节处理气体的流速，使得Si至绝缘体的选择性不小于1。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US06177149B1

公开(公告)日：2001-01-23

申请号：US09216938

申请日：1998-12-21

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： H05H124

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 550° C. or above during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过在Si衬底上形成的绝缘膜上形成的孔中或通过Si衬底上形成的Si膜上形成的Ti形成Ti膜，该方法包括以下步骤：将Si衬底装载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在550℃或更高温度下被加热，并且调节处理气体的流速，使得Si至绝缘体的选择性不小于1。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US20090071404A1

公开(公告)日：2009-03-19

申请号：US12289597

申请日：2008-10-30

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： C23C16/54 ,  C25F1/00

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invention. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过CVD法在通过本发明的方法形成在Si衬底上或形成在Si衬底上的Si膜上形成的绝缘膜中形成的Ti形成Ti膜。 该方法包括以下步骤：将Si衬底加载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在500℃或更低温度下被加热。 SiH 4气体的流量为TiCl 4气体流量的30-70％。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US07153773B2

公开(公告)日：2006-12-26

申请号：US10868936

申请日：2004-06-17

申请人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

发明人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： C23C16/45514 ,  C23C16/34 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76871 ,  H01L23/485 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75 ,  H01L29/4966 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.

摘要翻译： 使用TiSiN膜作为半导体器件的阻挡金属层，以防止Cu的扩散。 TiSiN膜通过等离子体CVD法或热CVD法形成。 使用TiCl 4气体，氢化硅气体和NH 3气体作为用于通过热CVD法形成TiSiN膜的源气体。 使用TiCl 4气体，氢化硅气体，H 2气体和N 2气体作为用于通过等离子体形成TiSiN膜的源气体 CVD工艺。

公开(公告)号：US20050136660A1

公开(公告)日：2005-06-23

申请号：US11028736

申请日：2005-01-05

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： C23C16/04 ,  C23C16/08 ,  H01L21/768 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76855

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过CVD法形成的Si膜上形成的绝缘膜上形成的Ti膜或通过本发明的方法形成在Si衬底上的Si膜上形成Ti膜。 该方法包括将Si衬底加载到成膜室中的步骤; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4 N气体供应到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在500℃或更低温度下被加热。 SiH 4气体的流速是TiCl 4气体流速的30-70％。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US07879179B2

公开(公告)日：2011-02-01

申请号：US11980596

申请日：2007-10-31

申请人： Hayashi Otsuki

发明人： Hayashi Otsuki

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H01J7/24 ,  H05B31/26

CPC分类号： C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

摘要： A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al2O3 and Y2O3 is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.

摘要翻译： 本发明的处理装置具有安装有半导体晶片的安装室，并且具有用于在加热，等离子体和工艺气体或它们的组合中的任一种下加工基板的构件，其中形成有Al 2 O 3和Y 2 O 3的膜 室内壁表面和室内部件暴露的表面，具有高耐腐蚀性和绝缘性，并且当将工艺气体引入到半导体晶片的处理表面并扩散到其中时，任何 产品不太可能沉积在等离子体产生区域和保持在室内的那些构件上。

公开(公告)号：US07828016B2

公开(公告)日：2010-11-09

申请号：US12081687

申请日：2008-04-18

申请人： Hayashi Otsuki ,  Yutaka Miura

发明人： Hayashi Otsuki ,  Yutaka Miura

IPC分类号： F16K11/10

CPC分类号： F16K11/0856 ,  F17D1/04 ,  Y10T137/87885

摘要： A process gas line (255) for carrying WF6 gas for nucleation, a process gas line (259) for carrying WF6 gas for film deposition after nucleation are joined at a single joint (280) to a carrier gas line (256). A gas line (270) is connected to the joint (280) to carry a mixed gas of the carrier gas and WF6 gas to a processing chamber defined by a processing vessel. Sections of the carrier gas line (256) and the gas line (270) extending on the opposite sides of the joint (280) extend along a straight line, and the process gas lines (255, 259) are perpendicular to the gas line (270).

摘要翻译： 用于携带用于成核的WF6气体的工艺气体管线（255），用于承载成核后用于膜沉积的WF6气体的工艺气体管线（259）在单个接头（280）处接合到载气管线（256）。 气体管线（270）连接到接头（280），以将载气和WF 6气体的混合气体输送到由处理容器限定的处理室。 在接头（280）的相对侧延伸的载气管线（256）和气体管线（270）的部分沿着直线延伸，并且工艺气体管线（255,259）垂直于气体管线 270）。