公开(公告)号：US06841203B2

公开(公告)日：2005-01-11

申请号：US10216398

申请日：2002-08-12

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： C23C16/04 ,  C23C16/08 ,  H01L21/768 ,  H05H1/24

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76855

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过CVD法形成的Si膜上形成的绝缘膜上形成的Ti膜或通过本发明的方法形成在Si衬底上的Si膜上形成Ti膜。 该方法包括以下步骤：将Si衬底加载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在500℃或更低温度下被加热。 SiH 4气体的流量为TiCl 4气体流量的30-70％。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US06919273B1

公开(公告)日：2005-07-19

申请号：US10148952

申请日：1999-12-09

申请人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

发明人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L27/108 ,  H01L29/49 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C23C16/45514 ,  C23C16/34 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76871 ,  H01L23/485 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75 ,  H01L29/4966 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.

摘要翻译： 使用TiSiN膜作为半导体器件的阻挡金属层，以防止Cu的扩散。 TiSiN膜通过等离子体CVD法或热CVD法形成。 使用TiCl 4气体，氢化硅气体和NH 3气体作为用于通过热CVD法形成TiSiN膜的源气体。 使用TiCl 4气体，氢化硅气体，H 2气体和N 2气体作为用于通过等离子体形成TiSiN膜的源气体 CVD工艺。

公开(公告)号：US06451388B1

公开(公告)日：2002-09-17

申请号：US09713008

申请日：2000-11-16

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： H05H124

CPC分类号： H01L21/76855 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76843

摘要： A Ti film is formed by chemical vapor deposition in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at a temperature of from 550 to 700° C. during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过在Si衬底上形成的绝缘膜中形成的孔中或在Si衬底上形成的Si膜上的化学气相沉积形成Ti膜，该方法包括以下步骤：将Si衬底装载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 在沉积Ti膜期间，Si衬底在550-700℃的温度下被加热，并调节处理气体的流速，使得Si至绝缘体的选择性不小于1。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US06177149B1

公开(公告)日：2001-01-23

申请号：US09216938

申请日：1998-12-21

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： H05H124

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method comprising the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 550° C. or above during the deposition of the Ti film, and the flow rates of the processing gases are regulated so that Si-to-insulator selectivity is not less than one. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过在Si衬底上形成的绝缘膜上形成的孔中或通过Si衬底上形成的Si膜上形成的Ti形成Ti膜，该方法包括以下步骤：将Si衬底装载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在550℃或更高温度下被加热，并且调节处理气体的流速，使得Si至绝缘体的选择性不小于1。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US07484513B2

公开(公告)日：2009-02-03

申请号：US11028736

申请日：2005-01-05

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76855

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过CVD法形成的Si膜上形成的绝缘膜上形成的Ti膜或通过本发明的方法形成在Si衬底上的Si膜上形成Ti膜。 该方法包括将Si衬底加载到成膜室中的步骤; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在500℃或更低温度下被加热。 SiH 4气体的流量为TiCl 4气体流量的30-70％。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US20090071404A1

公开(公告)日：2009-03-19

申请号：US12289597

申请日：2008-10-30

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： C23C16/54 ,  C25F1/00

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invention. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过CVD法在通过本发明的方法形成在Si衬底上或形成在Si衬底上的Si膜上形成的绝缘膜中形成的Ti形成Ti膜。 该方法包括以下步骤：将Si衬底加载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在500℃或更低温度下被加热。 SiH 4气体的流量为TiCl 4气体流量的30-70％。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US07153773B2

公开(公告)日：2006-12-26

申请号：US10868936

申请日：2004-06-17

申请人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

发明人： Hayashi Otsuki ,  Kunihiro Tada ,  Kimihiro Matsuse

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： C23C16/45514 ,  C23C16/34 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76871 ,  H01L23/485 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75 ,  H01L29/4966 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.

摘要翻译： 使用TiSiN膜作为半导体器件的阻挡金属层，以防止Cu的扩散。 TiSiN膜通过等离子体CVD法或热CVD法形成。 使用TiCl 4气体，氢化硅气体和NH 3气体作为用于通过热CVD法形成TiSiN膜的源气体。 使用TiCl 4气体，氢化硅气体，H 2气体和N 2气体作为用于通过等离子体形成TiSiN膜的源气体 CVD工艺。

公开(公告)号：US20050136660A1

公开(公告)日：2005-06-23

申请号：US11028736

申请日：2005-01-05

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： C23C16/04 ,  C23C16/08 ,  H01L21/768 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76855

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过CVD法形成的Si膜上形成的绝缘膜上形成的Ti膜或通过本发明的方法形成在Si衬底上的Si膜上形成Ti膜。 该方法包括将Si衬底加载到成膜室中的步骤; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4 N气体供应到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在500℃或更低温度下被加热。 SiH 4气体的流速是TiCl 4气体流速的30-70％。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US08124168B2

公开(公告)日：2012-02-28

申请号：US11667945

申请日：2006-04-04

申请人： Kunihiro Tada ,  Hiroyuki Miyashita ,  Isao Gunji

发明人： Kunihiro Tada ,  Hiroyuki Miyashita ,  Isao Gunji

IPC分类号： C23C16/46

CPC分类号： C23C16/46 ,  C23C16/52 ,  H01L21/67248 ,  H01L22/10

摘要： Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.

摘要翻译： 公开了一种基板处理方法，其中预先测量待处理的基板的红外吸收率或红外线透射率，并且根据测量值对基板进行处理，同时至少在位于中心部分的第一区域中独立地控制温度 基板和在第一区域周围的第二区域中，使用分别设置用于第一区域和第二区域并且可以彼此独立地控制的温度控制装置。

公开(公告)号：US20100227062A1

公开(公告)日：2010-09-09

申请号：US12280044

申请日：2007-02-21

申请人： Kensaku Narushima ,  Satoshi Wakabayashi ,  Kunihiro Tada

发明人： Kensaku Narushima ,  Satoshi Wakabayashi ,  Kunihiro Tada

IPC分类号： C23C16/22

CPC分类号： C23C16/14 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/56

摘要： A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.

摘要翻译： 在设置在室31内的晶片W的表面上形成Ti膜，同时从至少在表面上由含Ni材料制成的喷头40将含有TiCl 4气体的处理气体注入到室31中。 该方法包括在将喷头40设定在300℃以上且小于450℃的温度下，在规定数量的晶片W上形成Ti膜，将TiCl 4气体以1〜 12mL / min（sccm）或者在0.1-2.5Pa的分压下设置TiCl 4气体，然后在将喷头40设定在200〜300℃的温度的同时进行室31内的清洗， 气体进入腔室31。