发明授权
- 专利标题： Semiconductor integrated circuit device
- 专利标题（中）： 半导体集成电路器件
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申请号： US11501118申请日： 2006-08-09
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公开(公告)号： US07489552B2公开(公告)日： 2009-02-10
- 发明人: Kenzo Kurotsuchi , Norikatsu Takaura , Osamu Tonomura , Motoyasu Terao , Hideyuki Matsuoka , Riichiro Takemura
- 申请人： Kenzo Kurotsuchi , Norikatsu Takaura , Osamu Tonomura , Motoyasu Terao , Hideyuki Matsuoka , Riichiro Takemura
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2003-406802 20031205
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
In a non-volatile phase change memory, information is recorded by utilizing a change in resistance of a phase change portion. When the phase change portion is allowed to generate Joule's heat and is held at a specific temperature, it goes into a state of a low resistance. When the gate voltage of a memory cell selection transistor QM is controlled to afford a low resistance state, the maximum amount of current applied to the phase change portion is limited by the application of a medium-state voltage to the control gate, thereby avoiding overheating of the phase change portion.
公开/授权文献
- US20060274593A1 Semiconductor integrated circuit device 公开/授权日：2006-12-07
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