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公开(公告)号：US20060274593A1
公开(公告)日：2006-12-07
申请号：US11501118
申请日：2006-08-09
申请人： Kenzo Kurotsuchi , Norikatsu Takaura , Osamu Tonomura , Motoyasu Terao , Hideyuki Matsuoka , Riichiro Takemura
发明人： Kenzo Kurotsuchi , Norikatsu Takaura , Osamu Tonomura , Motoyasu Terao , Hideyuki Matsuoka , Riichiro Takemura
IPC分类号： G11C17/18
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0071 , G11C2013/0078 , G11C2013/009 , G11C2213/76 , G11C2213/79
摘要： In a non-volatile phase change memory, information is recorded by utilizing a change in resistance of a phase change portion. When the phase change portion is allowed to generate Joule's heat and is held at a specific temperature, it goes into a state of a low resistance. When the gate voltage of a memory cell selection transistor QM is controlled to afford a low resistance state, the maximum amount of current applied to the phase change portion is limited by the application of a medium-state voltage to the control gate, thereby avoiding overheating of the phase change portion.
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公开(公告)号：US07123535B2
公开(公告)日：2006-10-17
申请号：US11002245
申请日：2004-12-03
申请人： Kenzo Kurotsuchi , Norikatsu Takaura , Osamu Tonomura , Motoyasu Terao , Hideyuki Matsuoka , Riichiro Takemura
发明人： Kenzo Kurotsuchi , Norikatsu Takaura , Osamu Tonomura , Motoyasu Terao , Hideyuki Matsuoka , Riichiro Takemura
IPC分类号： G11C17/18
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0071 , G11C2013/0078 , G11C2013/009 , G11C2213/76 , G11C2213/79
摘要： In a non-volatile phase change memory, information is recorded by utilizing a change in resistance of a phase change portion. When the phase change portion is allowed to generate Joule's heat and is held at a specific temperature, it goes into a state of a low resistance. When the gate voltage of a memory cell selection transistor QM is controlled to afford a low resistance state, the maximum amount of current applied to the phase change portion is limited by the application of a medium-state voltage to the control gate, thereby avoiding overheating of the phase change portion.
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公开(公告)号：US07489552B2
公开(公告)日：2009-02-10
申请号：US11501118
申请日：2006-08-09
申请人： Kenzo Kurotsuchi , Norikatsu Takaura , Osamu Tonomura , Motoyasu Terao , Hideyuki Matsuoka , Riichiro Takemura
发明人： Kenzo Kurotsuchi , Norikatsu Takaura , Osamu Tonomura , Motoyasu Terao , Hideyuki Matsuoka , Riichiro Takemura
IPC分类号： G11C11/34
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0071 , G11C2013/0078 , G11C2013/009 , G11C2213/76 , G11C2213/79
摘要： In a non-volatile phase change memory, information is recorded by utilizing a change in resistance of a phase change portion. When the phase change portion is allowed to generate Joule's heat and is held at a specific temperature, it goes into a state of a low resistance. When the gate voltage of a memory cell selection transistor QM is controlled to afford a low resistance state, the maximum amount of current applied to the phase change portion is limited by the application of a medium-state voltage to the control gate, thereby avoiding overheating of the phase change portion.
摘要翻译： 在非易失性相变存储器中，利用相变部分的电阻变化来记录信息。 当相变部分产生焦耳热并保持在特定温度时，其进入低电阻状态。 当控制存储单元选择晶体管QM的栅极电压以提供低电阻状态时，通过向控制栅极施加中等电压来限制施加到相变部分的最大电流量，从而避免过热 的相变部。
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公开(公告)号：US20050128799A1
公开(公告)日：2005-06-16
申请号：US11002245
申请日：2004-12-03
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0071 , G11C2013/0078 , G11C2013/009 , G11C2213/76 , G11C2213/79
摘要： In a non-volatile phase change memory, information is recorded by utilizing a change in resistance of a phase change portion. When the phase change portion is allowed to generate Joule's heat and is held at a specific temperature, it goes into a state of a low resistance. At this time, if a constant voltage source is used, not only the phase change portion assumes a state of a low resistance, but also a large current flows, so that a sample concerned is overheated and goes into a state of a high resistance. Thus, it is difficult to make the phase change portion low in resistance stably. When the gate voltage of a memory cell selection transistor QM is controlled with MISFET to afford a low resistance state, the maximum amount of current applied to the sample is limited by the application of a medium-state voltage.
摘要翻译： 在非易失性相变存储器中，利用相变部分的电阻变化来记录信息。 当相变部分产生焦耳热并保持在特定温度时，其进入低电阻状态。 此时，如果使用恒定电压源，则不仅相变部分呈现低电阻状态，而且流过大电流，使得有关样品过热并进入高电阻状态。 因此，难以稳定地使相位变化部的电阻低。 当用MISFET控制存储单元选择晶体管QM的栅极电压以提供低电阻状态时，施加到样品的最大电流量受到施加中等电压的限制。
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公开(公告)号：US20090250680A1
公开(公告)日：2009-10-08
申请号：US12487492
申请日：2009-06-18
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。
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公开(公告)号：US07335907B2
公开(公告)日：2008-02-26
申请号：US10790881
申请日：2004-03-03
IPC分类号： H01L47/00
CPC分类号： G11C11/5678 , G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L27/2454 , H01L27/2463 , H01L45/06 , H01L45/1213 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase change memory device is provided which is constituted by memory cells using memory elements and select transistors and having high heat resistance to be capable of an operation at 140 degrees or higher. As a device configuration, a recording layer of which, of Zn—Ge—Te, content of Zn, Cd or the like is 20 atom percent or more, content of at least one element selected from the group consisting of Ge and Sb is less than 40 atom percent, and content of Te is 40 atom percent or more is used. It is thereby possible to implement the memory device usable for an application which may be performed at a high temperature such as an in-vehicle use.
摘要翻译： 提供一种相变存储器件，其由使用存储元件和选择晶体管的存储器单元构成，并且具有高耐热性能够在140度以上的操作。 作为器件结构，其中Zn-Ge-Te，Zn，Cd等的含量为20原子％以上的记录层选自Ge和Sb中的至少一种元素的含量较少 40原子％以上，Te含量为40原子％以上。 由此，可以实现可以在诸如车载用途的高温下执行的应用的存储装置。
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公开(公告)号：US08129707B2
公开(公告)日：2012-03-06
申请号：US12487492
申请日：2009-06-18
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。
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公开(公告)号：US07834337B2
公开(公告)日：2010-11-16
申请号：US10587079
申请日：2004-12-20
IPC分类号： H01L29/02
CPC分类号： G11C13/0004 , G11C13/04 , G11C13/047 , G11C2213/56 , G11C2213/71 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase-change memory device including a memory cell having a memory element and a select transistor is improved in heat resistance so that it may be operable at 145° C. or higher.The memory layer is used which has a content of Zn or Cd of 20 at % or more and 50 at % or less, a content of Ge or Sb of 5 at % or more and 25 at % or less, and a content of Te of 40 at % or more and 65 at % or less in Zn-Ge-Te.
摘要翻译： 包括具有存储元件和选择晶体管的存储单元的相变存储器件的耐热性得到改善，使得其在145℃以上可操作。 使用具有20原子％以上且50原子％以下的Zn或Cd含量的记忆层，Ge或Sb的含量为5原子％以上且25原子％以下，Te含量 在Zn-Ge-Te中为40at％以上且65at％以下。
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公开(公告)号：US07470923B2
公开(公告)日：2008-12-30
申请号：US11370945
申请日：2006-03-09
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
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公开(公告)号：US20080048166A1
公开(公告)日：2008-02-28
申请号：US11907989
申请日：2007-10-19
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。
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