发明授权
- 专利标题: Method of fabricating flash memory cell
- 专利标题(中): 制造闪存单元的方法
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申请号: US11750320申请日: 2007-05-17
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公开(公告)号: US07491607B2公开(公告)日: 2009-02-17
- 发明人: Wei-Zhe Wong , Ching-Sung Yang
- 申请人: Wei-Zhe Wong , Ching-Sung Yang
- 申请人地址: TW Hsinchu
- 专利权人: Powerchip Semiconductor Corp.
- 当前专利权人: Powerchip Semiconductor Corp.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 优先权: TW93123057A 20040802
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A flash memory cell is provided. A deep well is disposed in a substrate and a well is disposed within the deep well. A stacked gate structure is disposed on the substrate. A source region and a drain region are disposed in the substrate on each side of the stacked gate structure. A select gate is disposed between the stacked gate structure and the source region. A first gate dielectric layer is disposed between the select gate and the stacked gate structure. A second gate dielectric layer is disposed between the select gate and the substrate. A shallow doped region is disposed in the substrate under the stacked gate structure and the select gate. A deep doped region is disposed in the substrate on one side of the stacked gate structure. The conductive plug on the substrate extends through the drain region and the deep doped region.
公开/授权文献
- US20070218634A1 METHOD OF FABRICATING FLASH MEMORY CELL 公开/授权日:2007-09-20