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US07494871B2 Semiconductor memory devices and methods for forming the same 有权
半导体存储器件及其形成方法

Semiconductor memory devices and methods for forming the same
Abstract:
A semiconductor memory device can include select transistors and cell transistors on a semiconductor substrate. An insulation layer covers the select transistors and the cell transistors. The bit lines are in the insulation layer and are electrically connected to respective ones of the select transistors. The bit lines are arranged along at least two different parallel planes having different heights relative to the semiconductor substrate.
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