Invention Grant
- Patent Title: Semiconductor memory devices and methods for forming the same
- Patent Title (中): 半导体存储器件及其形成方法
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Application No.: US11647671Application Date: 2006-12-29
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Publication No.: US07494871B2Publication Date: 2009-02-24
- Inventor: Chang-Sub Lee , Jeong-Hyuk Choi , Woon-Kyung Lee , Jai-Hyuk Song , Dong-Yean Oh
- Applicant: Chang-Sub Lee , Jeong-Hyuk Choi , Woon-Kyung Lee , Jai-Hyuk Song , Dong-Yean Oh
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2006-0097321 20061002
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A semiconductor memory device can include select transistors and cell transistors on a semiconductor substrate. An insulation layer covers the select transistors and the cell transistors. The bit lines are in the insulation layer and are electrically connected to respective ones of the select transistors. The bit lines are arranged along at least two different parallel planes having different heights relative to the semiconductor substrate.
Public/Granted literature
- US20080081413A1 Semiconductor memory devices and methods for forming the same Public/Granted day:2008-04-03
Information query
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