发明授权
- 专利标题： Protection in integrated circuits
- 专利标题（中）： 集成电路保护
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申请号： US10231388申请日： 2002-08-29
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公开(公告)号： US07494894B2公开(公告)日： 2009-02-24
- 发明人: Neal R. Rueger , William Budge , Weimin Li
- 申请人： Neal R. Rueger , William Budge , Weimin Li
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman, Lundberg & Woessner, P.A.
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
A method including, prior to a plasma heat-up operation, forming a liner on a structure coated with an insulator. And a method including forming a trench on a substrate, forming an insulator on the trench, and after forming a liner having a thickness of between about 50 angstroms and about 400 angstroms on the insulator, applying a plasma heat-up operation to the substrate.
公开/授权文献
- US20040043580A1 Protection in integrated circuits 公开/授权日：2004-03-04
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