Invention Grant
- Patent Title: Protection in integrated circuits
- Patent Title (中): 集成电路保护
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Application No.: US10231388Application Date: 2002-08-29
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Publication No.: US07494894B2Publication Date: 2009-02-24
- Inventor: Neal R. Rueger , William Budge , Weimin Li
- Applicant: Neal R. Rueger , William Budge , Weimin Li
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/762
- IPC: H01L21/762

Abstract:
A method including, prior to a plasma heat-up operation, forming a liner on a structure coated with an insulator. And a method including forming a trench on a substrate, forming an insulator on the trench, and after forming a liner having a thickness of between about 50 angstroms and about 400 angstroms on the insulator, applying a plasma heat-up operation to the substrate.
Public/Granted literature
- US20040043580A1 Protection in integrated circuits Public/Granted day:2004-03-04
Information query
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