发明授权
- 专利标题: Coupling of conductive vias to complex power-signal substructures
- 专利标题(中): 导电通孔耦合到复杂的功率信号子结构
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申请号: US10912257申请日: 2004-08-05
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公开(公告)号: US07500306B2公开(公告)日: 2009-03-10
- 发明人: Karen Carpenter , Voya R. Markovich , David L. Thomas
- 申请人: Karen Carpenter , Voya R. Markovich , David L. Thomas
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Schmeiser, Olsen & Watts
- 代理商 Joseph Petrokaitis
- 主分类号: H05K3/00
- IPC分类号: H05K3/00 ; H05K3/42 ; H05K3/46 ; H05K1/00
摘要:
A method of forming an electrical structure that includes a complex power-signal (CPS) substructure. The CPS substructure is formed and tested to determine whether the CPS substructure satisfies electrical performance acceptance requirements. The testing includes testing for electrical shorts, electrical opens, erroneous impedances, and electrical signal delay. If the CPS substructure passes the testes, then a dielectric-metallic (DM) laminate is formed on an external surface of the CPS substructure. The DM laminate includes an alternating sequence of an equal number N of dielectric layers and metallic layers such that a first dielectric layer of the N dielectric layers is formed on an external surface of the CPS substructure. N is at least 2. A multilevel conductive via is formed through the DM laminate and is electrically coupled to a metal layer of the CPS substructure.
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