发明授权
- 专利标题: Method for producing semiconductor wafer and semiconductor wafer
- 专利标题(中): 半导体晶片和半导体晶片的制造方法
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申请号: US11666082申请日: 2005-10-12
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公开(公告)号: US07507146B2公开(公告)日: 2009-03-24
- 发明人: Tadahiro Kato , Masayoshi Sekizawa , Mamoru Okada , Hisashi Kijima
- 申请人: Tadahiro Kato , Masayoshi Sekizawa , Mamoru Okada , Hisashi Kijima
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff & Berridge, PLC
- 优先权: JP2004-312195 20041027
- 国际申请: PCT/JP2005/018745 WO 20051012
- 国际公布: WO2006/046403 WO 20060504
- 主分类号: B24B1/00
- IPC分类号: B24B1/00
摘要:
The present invention is a method for producing a semiconductor wafer, comprising: at least a double-side polishing step; and a chamfered-portion polishing step; wherein as a first chamfered-portion polishing step, at least, a chamfered portion of the wafer is polished so that a chamfered surface of each of main surface sides in the chamfered portion is in contact with a polishing pad; then the double-side polishing is performed; as a second chamfered-portion polishing step, at least, the chamfered portion of the wafer is polished so that an end surface of the chamfered portion is in contact with a polishing pad and so that both main surfaces of the wafer are not in contact with a polishing pad. Thereby, when a semiconductor wafer is produced, scratch and such generated in the chamfered portion in a double-side polishing process can be removed and, excessive polishing in a peripheral portion of a main surface can be prevented from being caused in polishing a chamfered portion. Therefore, a method for producing a semiconductor wafer having a high flatness even in the vicinity of a chamfered portion, and the semiconductor wafer are provided.
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