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1.发明申请Method for manufacturing polishing pad, polishing pad, and method for polishing wafer 有权制造抛光垫的方法，抛光垫和抛光晶片的方法公开(公告)号：US20080248728A1
公开(公告)日：2008-10-09
申请号：US12078525
申请日：2008-04-01
CPC分类号： B24D18/00 , B24B37/20 , Y10T428/24992
摘要： There is disclosed a method for manufacturing a polishing pad that is formed of a urethane foam pad and attached to a turn table to polish a wafer, the method comprising at least steps of: slicing a urethane foam cake to provide the urethane foam pad; and performing press processing with respect to the urethane foam pad with a pressure of 15000 g/cm2 or above, a polishing pad manufactured by this method, and a method for polishing a wafer by using this polishing pad. There can be provided a method for manufacturing a polishing pad that can stably obtain a wafer with high flatness, etc.
摘要翻译： 公开了一种用于制造由聚氨酯泡沫垫形成的抛光垫的方法，该抛光垫安装在转台上以抛光晶片，所述方法至少包括以下步骤：切割聚氨酯泡沫块以提供聚氨酯泡沫垫; 对该聚氨酯泡沫垫进行压力加工，压力为15000g / cm 2以上，通过该方法制造的研磨垫，以及使用该抛光垫来研磨晶片的方法 。 可以提供一种能够稳定地获得具有高平坦度等的晶片的抛光垫的制造方法。
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公开(公告)号：US08287331B2
公开(公告)日：2012-10-16
申请号：US12078525
申请日：2008-04-01
CPC分类号： B24D18/00 , B24B37/20 , Y10T428/24992
摘要： There is disclosed a method for manufacturing a polishing pad that is formed of a urethane foam pad and attached to a turn table to polish a wafer, the method comprising at least steps of: slicing a urethane foam cake to provide the urethane foam pad; and performing press processing with respect to the urethane foam pad with a pressure of 15000 g/cm2 or above, a polishing pad manufactured by this method, and a method for polishing a wafer by using this polishing pad. There can be provided a method for manufacturing a polishing pad that can stably obtain a wafer with high flatness, etc.
摘要翻译： 公开了一种用于制造由聚氨酯泡沫垫形成的抛光垫的方法，该抛光垫安装在转台上以抛光晶片，所述方法至少包括以下步骤：切割聚氨酯泡沫块以提供聚氨酯泡沫垫; 对该聚氨酯泡沫垫进行冲压加工，压力为15000g / cm 2以上，通过该方法制造的研磨垫，以及使用该抛光垫对晶片进行研磨的方法。 可以提供一种能够稳定地获得具有高平坦度等的晶片的抛光垫的制造方法。
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公开(公告)号：US20080096474A1
公开(公告)日：2008-04-24
申请号：US11666082
申请日：2005-10-12
CPC分类号： H01L21/02008 , B24B9/065 , B24B37/08 , H01L21/02021
摘要： The present invention is a method for producing a semiconductor wafer, comprising: at least a double-side polishing step; and a chamfered-portion polishing step; wherein as a first chamfered-portion polishing step, at least, a chamfered portion of the wafer is polished so that a chamfered surface of each of main surface sides in the chamfered portion is in contact with a polishing pad; then the double-side polishing is performed; as a second chamfered-portion polishing step, at least, the chamfered portion of the wafer is polished so that an end surface of the chamfered portion is in contact with a polishing pad and so that both main surfaces of the wafer are not in contact with a polishing pad. Thereby, when a semiconductor wafer is produced, scratch and such generated in the chamfered portion in a double-side polishing process can be removed and, excessive polishing in a peripheral portion of a main surface can be prevented from being caused in polishing a chamfered portion. Therefore, a method for producing a semiconductor wafer having a high flatness even in the vicinity of a chamfered portion, and the semiconductor wafer are provided.
摘要翻译： 本发明是一种半导体晶片的制造方法，其特征在于，包括：至少双面研磨工序; 和倒角部分抛光步骤; 其中，作为第一倒角部分研磨工序，至少对所述晶片的倒角部进行研磨，使得所述倒角部的各主面侧的倒角面与抛光垫接触; 然后进行双面抛光; 作为第二倒角部分抛光步骤，至少抛光晶片的倒角部分，使得倒角部分的端面与抛光垫接触，并且晶片的两个主表面都不与 抛光垫 因此，当制造半导体晶片时，可以消除在双面抛光工艺中的倒角部分产生的刮痕和产生，并且可以防止在主表面的周边部分中的抛光过度抛光倒角部分 。 因此，提供了即使在倒角部附近也具有高平坦度的半导体晶片的制造方法和半导体晶片。
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公开(公告)号：US07507146B2
公开(公告)日：2009-03-24
申请号：US11666082
申请日：2005-10-12
IPC分类号： B24B1/00
CPC分类号： H01L21/02008 , B24B9/065 , B24B37/08 , H01L21/02021
摘要： The present invention is a method for producing a semiconductor wafer, comprising: at least a double-side polishing step; and a chamfered-portion polishing step; wherein as a first chamfered-portion polishing step, at least, a chamfered portion of the wafer is polished so that a chamfered surface of each of main surface sides in the chamfered portion is in contact with a polishing pad; then the double-side polishing is performed; as a second chamfered-portion polishing step, at least, the chamfered portion of the wafer is polished so that an end surface of the chamfered portion is in contact with a polishing pad and so that both main surfaces of the wafer are not in contact with a polishing pad. Thereby, when a semiconductor wafer is produced, scratch and such generated in the chamfered portion in a double-side polishing process can be removed and, excessive polishing in a peripheral portion of a main surface can be prevented from being caused in polishing a chamfered portion. Therefore, a method for producing a semiconductor wafer having a high flatness even in the vicinity of a chamfered portion, and the semiconductor wafer are provided.
摘要翻译： 本发明是一种半导体晶片的制造方法，其特征在于，包括：至少双面研磨工序; 和倒角部分抛光步骤; 其中，作为第一倒角部分研磨工序，至少对所述晶片的倒角部进行研磨，使得所述倒角部的各主面侧的倒角面与抛光垫接触; 然后进行双面抛光; 作为第二倒角部分抛光步骤，至少抛光晶片的倒角部分，使得倒角部分的端面与抛光垫接触，并且晶片的两个主表面都不与 抛光垫 因此，当制造半导体晶片时，可以消除在双面抛光工艺中的倒角部分产生的刮痕和产生，并且可以防止在主表面的周边部分中的抛光过度抛光倒角部分 。 因此，提供了即使在倒角部附近也具有高平坦度的半导体晶片的制造方法和半导体晶片。
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