发明授权
- 专利标题： IGBT with amorphous silicon transparent collector
- 专利标题（中）： IGBT与非晶硅透明集电极
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申请号： US11297571申请日： 2005-12-08
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公开(公告)号： US07507608B2公开(公告)日： 2009-03-24
- 发明人: Richard Francis , Chiu Ng , Hamilton Lu , Ranadeep Dutta
- 申请人： Richard Francis , Chiu Ng , Hamilton Lu , Ranadeep Dutta
- 申请人地址： US CA El Segundo
- 专利权人： International Rectifier Corporation
- 当前专利权人： International Rectifier Corporation
- 当前专利权人地址： US CA El Segundo
- 代理机构： Ostrolenk, Faber, Gerb & Soffen, LLP
- 主分类号： H01L21/332
- IPC分类号： H01L21/332
摘要：
The collector or anode of a non-punch through IGBT formed in a float zone silicon wafer is formed by a P doped amorphous silicon layer deposited on the back surface of an ultra thin wafer. A DMOS structure is formed on the top surface of the wafer before the bottom structure is formed. A back contact is formed over the amorphous silicon layer. No alloy step is needed to activate the anode defined by the P type amorphous silicon.
公开/授权文献
- US20060094179A1 IGBT with amorphous silicon transparent collector 公开/授权日：2006-05-04
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