Invention Grant
- Patent Title: Method for measuring thin layers in solid state devices
- Patent Title (中): 测量固态器件薄层的方法
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Application No.: US11780064Application Date: 2007-07-19
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Publication No.: US07512518B2Publication Date: 2009-03-31
- Inventor: Alexandre Blander , Richard Brassard , Carl Savard , Julien Sylvestre
- Applicant: Alexandre Blander , Richard Brassard , Carl Savard , Julien Sylvestre
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Anthony J. Canale
- Priority: CA2552623 20060720
- Main IPC: G06F15/00
- IPC: G06F15/00

Abstract:
A method of using acoustic signals in the form of waves or pulses to non-destructively measure the thickness of a bonding layer sandwiched between and bonding together overlying and underlying materials different from the bonding layer especially when the thickness of the bonding layer is so small that the features (maxima, minima, time position) of the echo from the interface of the bonding layer and the overlying material is indistinguishable, i.e., not independently observable from the features (maxima, minima, time position) of the echo from the interface of the bonding layer and the underlying material.
Public/Granted literature
- US20080021673A1 METHOD FOR MEASURING THIN LAYERS IN SOLID STATE DEVICES Public/Granted day:2008-01-24
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