Invention Grant
- Patent Title: Seal ring arrangements for immersion lithography systems
- Patent Title (中): 浸没式光刻系统的密封环布置
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Application No.: US11522611Application Date: 2006-09-18
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Publication No.: US07517639B2Publication Date: 2009-04-14
- Inventor: Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Sheng Yu , Jen Chieh Shih
- Applicant: Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Sheng Yu , Jen Chieh Shih
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K & L Gates LLP
- Main IPC: G03B27/52
- IPC: G03B27/52
Abstract:
Various seal ring arrangements for an immersion lithography system are disclosed. With the seal ring arrangements, the immersion lithography system can provide better sealing effect for processing the wafers on a wafer chuck.
Public/Granted literature
- US20070008508A1 Seal ring arrangements for immersion lithography systems Public/Granted day:2007-01-11
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