发明授权
- 专利标题: Process to open connection vias on a planarized surface
- 专利标题(中): 在平坦化表面上打开连接通孔的过程
-
申请号: US11411555申请日: 2006-04-25
-
公开(公告)号: US07523550B2公开(公告)日: 2009-04-28
- 发明人: Amanda Baer , Hamid Balamane , Michael Feldbaum , Ming Jiang , Aron Pentek
- 申请人: Amanda Baer , Hamid Balamane , Michael Feldbaum , Ming Jiang , Aron Pentek
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Zilka-Kotab, PC
- 主分类号: H01K3/10
- IPC分类号: H01K3/10
摘要:
A method for forming a via in an alumina protective layer on a structure such as a magnetic write head for use in perpendicular magnetic recording. A structure such as a magnetic pole, and or magnetic trailing shield, is formed over a substrate and is covered with a thick layer of alumina. The alumina layer can then be planarized by a chemical mechanical polishing process (CMP) and then a mask structure, such as a photoresist mask, is formed over the alumina layer. The mask structure is formed with an opening disposed over the contact pad. A reactive ion mill is then performed to remove portions of the alumina layer that are exposed at the opening in the mask, thereby forming a via in the alumina layer.
公开/授权文献
- US20070245557A1 Process to open connection vias on a planarized surface 公开/授权日:2007-10-25
信息查询