发明授权
- 专利标题: High thermal conducting circuit substrate and manufacturing process thereof
- 专利标题(中): 高导热电路基板及其制造工艺
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申请号: US11565836申请日: 2006-12-01
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公开(公告)号: US07540969B2公开(公告)日: 2009-06-02
- 发明人: Chung W. Ho , Leo Shen
- 申请人: Chung W. Ho , Leo Shen
- 申请人地址: TW Hsinchu
- 专利权人: Subtron Technology Co., Ltd.
- 当前专利权人: Subtron Technology Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: J.C. Patents
- 优先权: TW94142906A 20051206
- 主分类号: H01B13/00
- IPC分类号: H01B13/00
摘要:
A manufacturing process of a high thermal conducting circuit substrate is provided. First, a metal core substrate is provided and then the metal core substrate is etched at different etching speeds. Afterwards, two insulating layers are formed respectively on two sides of the etched metal core substrate. In addition, as an option, two conducting layers are formed respectively on two sides of the metal core substrate and are on top of the insulting layers. The conducting layers are patterned according to designs appropriate for the products. Because the high thermal conducting circuit substrate fabricated as the aforementioned manufacturing process mainly comprises the metal core substrate, it helps to elevate the thermal conduction of the circuit substrate itself.
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