发明授权
US07547610B2 Method of making a semiconductor device comprising isolation trenches inducing different types of strain
有权
制造半导体器件的方法，包括诱导不同类型应变的隔离沟槽
- 专利标题： Method of making a semiconductor device comprising isolation trenches inducing different types of strain
- 专利标题（中）： 制造半导体器件的方法，包括诱导不同类型应变的隔离沟槽
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申请号： US11734320申请日： 2007-04-12
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公开(公告)号： US07547610B2公开(公告)日： 2009-06-16
- 发明人: Christoph Schwan , Joe Bloomquist , Peter Javorka , Manfred Horstmann , Sven Beyer , Markus Forsberg , Frank Wirbeleit , Karla Romero
- 申请人： Christoph Schwan , Joe Bloomquist , Peter Javorka , Manfred Horstmann , Sven Beyer , Markus Forsberg , Frank Wirbeleit , Karla Romero
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102006046377 20060929
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
By forming isolation trenches of different types of intrinsic stress on the basis of separate process sequences, the strain characteristics of adjacent active semiconductor regions may be adjusted so as to obtain overall device performance. For example, highly stressed dielectric fill material including compressive and tensile stress may be appropriately provided in the respective isolation trenches in order to correspondingly adapt the charge carrier mobility of respective channel regions.
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