发明授权
- 专利标题: Methods of forming metal layers in the fabrication of semiconductor devices
- 专利标题(中): 在制造半导体器件时形成金属层的方法
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申请号: US11675158申请日: 2007-02-15
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公开(公告)号: US07547632B2公开(公告)日: 2009-06-16
- 发明人: Jung-Hun Seo , Gil-Heyun Choi , Jong-Myeong Lee , Hee-Sook Park
- 申请人: Jung-Hun Seo , Gil-Heyun Choi , Jong-Myeong Lee , Hee-Sook Park
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec
- 优先权: KR2003-45786 20030707
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A metal deposition processing apparatus includes a first processing chamber configured for holding a semiconductor substrate therein. A second processing chamber is configured for holding the semiconductor substrate therein and for forming an upper metal layer thereon. A transfer chamber is connected to the first processing chamber and the second processing chamber. The transfer chamber is configured to transfer the semiconductor substrate between the first processing chamber and the second processing chamber.