发明授权
- 专利标题： Semiconductor HBT MMIC device and semiconductor module
- 专利标题（中）： 半导体HBT MMIC器件和半导体模块
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申请号： US11247234申请日： 2005-10-12
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公开(公告)号： US07547929B2公开(公告)日： 2009-06-16
- 发明人: Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
- 申请人： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2004-301225 20041015
- 主分类号： H01L29/40
- IPC分类号： H01L29/40
摘要：
The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.
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