发明授权
- 专利标题： Porous gallium oxide films and methods for making and patterning the same
- 专利标题（中）： 多孔氧化镓膜及其制造和图案化的方法
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申请号： US11699530申请日： 2007-01-29
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公开(公告)号： US07547953B2公开(公告)日： 2009-06-16
- 发明人: Anthony Yu-Chung Ku , Steven Alfred Tysoe , Vinayak Tilak , Peter Micah Sandvik , Sergio Paulo Martins Loureiro , James Anthony Ruud , Anis Zribi , Wei-Cheng Tian
- 申请人： Anthony Yu-Chung Ku , Steven Alfred Tysoe , Vinayak Tilak , Peter Micah Sandvik , Sergio Paulo Martins Loureiro , James Anthony Ruud , Anis Zribi , Wei-Cheng Tian
- 申请人地址： US NY Niskayuna
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Niskayuna
- 代理商 Paul J. DiConza
- 主分类号： H01L27/14
- IPC分类号： H01L27/14
摘要：
Gallium oxide films for sensing gas comprise Ga2O3 and have a porosity of at least about 30%. Such films can be formed by coating a substrate with a solution comprising: a gallium salt and a porogen comprising an organic compound comprising a hydrophilic chain and a hydrophobic chain; and heating the substrate to a temperature in the range from about 400° C. to about 600° C. while exposing the substrate to an oxygen-containing source to convert the gallium salt to a gallium oxide.
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